Silicon Carbide Single Crystal Wafers, Ingots and Their Manufacturing Methods

• 1. 碳化硅单晶晶片及碳化硅单晶锭的制造方法 [P] . 中国专利： CN112626618A . 2021-04-09
• 2. 碳化硅单晶晶片、和碳化硅单晶锭的制造方法 [P] . 中国专利： CN105658846B . 2018.08.28
• 3. SILICON CARBIDE SINGLE CRYSTAL WAFER, AND METHODS FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL INGOT AND THE SILICON CARBIDE SINGLE CRYSTAL WAFER [P] . US2021108334A1 . 2021-04-15

  机译： 碳化硅单晶晶片，以及制造碳化硅单晶锭和碳化硅单晶晶片的方法

• 4. METHOD FOR PRODUCING SILICON CARBIDE SINGLE CRYSTAL, SILICON CARBIDE SINGLE CRYSTAL INGOT, SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE, SILICON CARBIDE EPITAXIAL WAFER AND THIN FILM EPITAXIAL WAFER [P] . 日本专利： JP2006225232A . 2006-08-31

  机译： 碳化硅单晶，碳化硅单晶锭，碳化硅单晶基体，碳化硅表皮和薄膜表皮的生产方法

• 5. SEED CRYSTAL FOR GROWING SILICON CARBIDE SINGLE CRYSTAL, SILICON CARBIDE SINGLE CRYSTAL INGOT, SILICON CARBIDE SINGLE CRYSTAL WAFER, AND METHOD FOR PRODUCING SILICON CARBIDE SINGLE CRYSTAL [P] . 日本专利： JP2002121099A . 2002-04-23

  机译： 用于生长碳化硅单晶的种子晶体，碳化硅单晶锭，碳化硅单晶硅片以及制备碳化硅单晶的方法

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• 6. Establishment of Manufacturing Methods for Growing Large B-Silicon Carbide Single Crystals. [R] . silva,william j. rosengreen, arne 1972

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