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Epitaxial wafer manufacturing method and epitaxial wafer
Epitaxial wafer manufacturing method and epitaxial wafer
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机译：外延晶片制造方法和外延晶片
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摘要
To provide a manufacturing method of an epitaxial wafer capable of manufacturing an epitaxial wafer having an epitaxial layer excellent in flatness.SOLUTION: A manufacturing method of an epitaxial wafer according to the present invention includes a first step (steps S1 to S3) of subsequently placing a wafer on a susceptor after supporting the wafer carried into a chamber by a lift pin, a second step (step S4) of raising the temperature in the chamber, a third step (steps S5 to S6) of measuring the temperature of the front surface and the back surface of the wafer and confirming whether the temperature difference is 10°C or less, a fourth step (steps S7 to S8) of supporting the wafer again by the lift pin when the temperature difference becomes 10°C or less, and subsequently placing the wafer on the susceptor again, and a fifth step (step S9) of obtaining an epitaxial wafer by epitaxial growth.SELECTED DRAWING: Figure 4
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