SELECTIVE SILICON NITRIDE ETCHING BY ECR PLASMAS USING SF_6 AND NF_3 BASED GAS MIXTURES

机译：使用基于SF_6和NF_3的气体混合物通过ECR等离子体进行选择性氮化硅刻蚀

获取原文

获取原文并翻译 | 示例

页面导航

摘要
著录项
相似文献
相关主题

摘要

The results of a study of SiN_x, SiO_2 and Si etching in a high-density ECR plasma using mixtures containing SF_6, NF_3, N_2, O_2 and Ar are presented. Higher selectivities of SiN_x etching over SiO_2 (up to ～100) were achieved with NF_3, while higher selectivities over Si (up to 5-10) were obtained with SF_6 based mixtures. Plasma and surface processes responsible for etching are analyzed.

机译：给出了在高密度ECR等离子体中使用SF_6，NF_3，N_2，O_2和Ar的混合物对SiN_x，SiO_2和Si蚀刻的研究结果。使用NF_3，可以在SiO_2上实现更高的SiN_x刻蚀选择性（高达〜100），而使用SF_6基混合物则可以实现比Si更高的选择性（高达5-10）。分析了负责蚀刻的等离子体和表面过程。

著录项

来源
《18th Symposium on Microelectronics Technology and Devices; 16th Symposium on Integrated Circuits and System Design; Sep 8-11, 2003; Sao Paulo, Brazil》|2003年|p.292-301|共10页
会议地点 Sao Paulo(BR);Sao Paulo(BR);Sao Paulo(BR);Sao Paulo(BR)
作者
C. Reyes-Betanzo; S.A. Moshkalyov; A.C.S. Ramos; J.W. Swart;
展开▼
作者单位

Instituto Nacional de Astrofisica, Optica y Electronica -INAOE, Apartado Postal 51, CP 72000, Puebla, Pue. Mexico;

展开▼
会议组织
原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
关键词

相似文献

外文文献
中文文献
专利

1. Remote plasma etching of titanium nitride using NF_3/argon and chlorine mixtures for chamber clean applications [J] . Ronald Hellriegel, Matthias Albert, Bernd Hintze, Microelectronic Engineering . 2007,第1期

机译：使用NF_3 /氩气和氯气混合物对氮化钛进行远程等离子刻蚀，用于腔室清洁应用
2. Optimization of Reactive-Ion Etching (RIE) parameters to maximize the lateral etch rate of silicon using SF_6/N_2 gas mixture: An alternative to etching Si in MEMS with Au components [J] . Mendes M. Kazar, Ghouila-Houri C., Hammami S., Materials Letters . 2021,第Feba15期

机译：使用SF_6 / N_2气体混合物最大化反应离子蚀刻（RIE）参数的优化，以最大化硅的横向蚀刻速率：用Au部件蚀刻MEMS中的Si替换Si
3. Thin Layer Etching of Silicon Nitride: Comparison of Downstream Plasma, Liquid HF and Gaseous HF Processes for Selective Removal After Light Ion Implantation [J] . Olivier Pollet, Nicolas Posseme, Vincent Ah-Leung, Diffusion and Defect Data. Solid State Data, Part B. Solid State Phenomena . 2016,第Null期

机译：氮化硅的薄层蚀刻：离子注入后选择性去除下游等离子体，液体HF和气体HF工艺的比较
4. Plasma Etching of Silicon Nitride with High Selectivity over Silicon Oxide and Silicon in Fluorine Containing Plasmas [C] . C.Reyes-Betanzo, S.A.Moshkalyov, M.A.Cotta, Meeting of the Electrochemical Society . 2002

机译：含有高选择性的氮化硅氮化硅的等离子体蚀刻，含氟含硅等离子体中的含硅
5. The characterization of octafluorocyclobutane-based plasma discharges for the selective etching and processing of silicon dioxide and low-K dielectric thin films. [D] . Barela, Marcos J. 2003

机译：基于八氟环丁烷的等离子放电的特征，用于二氧化硅和低K介电薄膜的选择性刻蚀和处理。
6. Comparative analysis of barium titanate thin films dry etching using inductively coupled plasmas by different fluorine-based mixture gas [O] . Yang Li, Cong Wang, Zhao Yao, 2014

机译：不同氟基混合气体使用电感耦合等离子体干法刻蚀钛酸钡薄膜的比较分析
7. Modelagem dos processos químicos em plasmas de misturas gasosas usadas na corrosão de silício. Parte 1: CF4 / O2 Modeling of the chemical processes in the plasma of gaseous mixtures used in the etching of silicon. Part 1: CF4/O2 [O] . G. F. Bauerfeldt, G. Arbilla 1998

机译：硅腐蚀中使用的混合气体等离子体中化学过程的建模。第1部分：CF4 / O2用于蚀刻硅的气态混合物等离子体中化学过程的建模。第1部分：CF4 / O2
8. ECR plasma synthesis of silicon nitride films on GaAs and InSb [R] . Barbour, J. C., Lovejoy, M. L., Ashby, C. I. H., 1993

机译：ECR等离子体合成Gaas和Insb上的氮化硅膜

SELECTIVE SILICON NITRIDE ETCHING BY ECR PLASMAS USING SF_6 AND NF_3 BASED GAS MIXTURES

摘要

著录项

相似文献

相关主题

期刊订阅