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首页> 外文会议>18th Symposium on Microelectronics Technology and Devices; 16th Symposium on Integrated Circuits and System Design; Sep 8-11, 2003; Sao Paulo, Brazil >DEGRADATION OF DEEP SUBMICRON PARTIALLY DEPLETED SOI CMOS TRANSISTORS UNDER MeV PROTON OR GAMMA IRRADIATION
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DEGRADATION OF DEEP SUBMICRON PARTIALLY DEPLETED SOI CMOS TRANSISTORS UNDER MeV PROTON OR GAMMA IRRADIATION

机译：MeV质子或伽马射线辐照对深亚微米半耗尽SOI CMOS晶体管的降解

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摘要

The performance degradation of CMOS transistors, fabricated in a 0.13 μm Partially Depleted (PD) Silicon-on-Insulator (SOI) technology and subjected to high-energy proton and γ-irradiation is described. The devices have been fabricated on UNIBOND wafers with a final film thickness of 100 nm, while the NO gate oxide thickness was 2.5 nm. Splits with and without halo implantation have been studied. It has been shown that the n-channel transistors develop a subthreshold edge channel leakage with increasing total ionising dose, which is related to radiation-induced hole trapping in the 400 nm thick buried oxide. This effect is absent in the p-MOSFETs. At the same time, the static parameters (threshold voltage, transconductance) exhibit a length dependent change. The latter is different for the halo and no halo split and is also a function of the type of irradiation. Finally, some new radiation damage mechanisms are described which are related to the so-called Linear Kink Effect (LKE), which is a gate tunneling induced floating body effect.
机译：描述了采用0.13μm部分耗尽（PD）绝缘体上硅（SOI）技术制造并受到高能质子和γ辐射的CMOS晶体管的性能下降。该器件已在UNIBOND晶圆上制造，最终膜厚为100 nm，而NO栅极氧化物的厚度为2.5 nm。已经研究了有和没有晕环植入的分裂。已经显示出，随着总电离剂量的增加，n沟道晶体管产生亚阈值边缘沟道泄漏，这与在400nm厚的掩埋氧化物中的辐射引起的空穴俘获有关。在p-MOSFET中没有这种效应。同时，静态参数（阈值电压，跨导）呈现出与长度有关的变化。后者对于光环而言是不同的，并且没有光晕分裂，并且还是照射类型的函数。最后，描述了一些与所谓的线性扭结效应（LKE）有关的新的辐射损伤机制，线性扭结效应是栅极隧穿引起的浮体效应。

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