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首页> 外文会议>18th Symposium on Microelectronics Technology and Devices; 16th Symposium on Integrated Circuits and System Design; Sep 8-11, 2003; Sao Paulo, Brazil >'ATOMISTIC' SIMULATION OF AlGaAs/InGaAs/GaAs PHEMTs
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'ATOMISTIC' SIMULATION OF AlGaAs/InGaAs/GaAs PHEMTs

机译：AlGaAs / InGaAs / GaAs PHEMT的“原子”模拟

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摘要

The effects of a discrete random dopant distribution on the AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor (PHEMT) characteristics were investigated using device simulation. The calculation is based upon self-consistent solving of the hydrodynamic equations (continuity equation and energy transport equation) in conjunction with Poisson's equation and Schroedinger's equation. The model accounts for hot electron effects, degeneracy, surface-states effects, real space transfer, quantum effects, and buffer injection phenomena. The simulation indicates a nonuniform potential distribution in the active layer and, in consequence, the conduction band edge profile presents fluctuating potential energy, which creates sharp variations in the electron density in the layer. It was also found that the drain electric current depends on the actual distribution of impurities.
机译：使用器件仿真研究了离散随机掺杂剂分布对AlGaAs / InGaAs / GaAs伪高电子迁移率晶体管（PHEMT）特性的影响。该计算基于结合泊松方程和薛定inger方程的流体力学方程（连续性方程和能量传输方程）的自洽解。该模型考虑了热电子效应，简并，表面态效应，实际空间转移，量子效应和缓冲剂注入现象。该模拟表明有源层中的电势分布不均匀，因此，导带边缘轮廓呈现出波动的势能，从而在该层中产生了电子密度的急剧变化。还发现，漏极电流取决于杂质的实际分布。

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