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首页> 外文会议>2003 Nanotechnology Conference and Trade Show Nanotech 2003 Vol.1 Feb 23-27, 2003 California, USA >Local Oxidation Characteristics of Single Crystal Silicon with an Atomic Force Microscope
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Local Oxidation Characteristics of Single Crystal Silicon with an Atomic Force Microscope

机译：单晶硅的原子力显微镜局部氧化特性

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摘要

In order to investigate local oxidation characteristics on Si (100) surfaces, the local oxidation processing has been carried out by using an atomic force microscope with a Si tip coated with Pt. It has been clarified that the bias voltage where an oxide feature can be generated has a threshold. The threshold voltage is 5-6 V for Si (100) surfaces with a native surface oxide layer. As the bias voltage exceeds the threshold, dimensions of the oxide feature increase with an increase of the bias voltage. Particularly, the height of generated oxide is sensitive to a variation of the bias voltage. In addition, it is demonstrated that the fine crisscross oxide lines with nine intersections (1500x1500x2.6 nm~3) are successfully fabricated by the local oxidation processing. The height of the intersection is about 0.6 nm higher than that of oxide lines. It indicates that an oxide feature is newly formed on the oxide line generated previously.
机译：为了研究Si（100）表面上的局部氧化特性，已经通过使用原子力显微镜进行了局部氧化处理，该原子力显微镜的Si尖端涂有Pt。已经阐明了可以产生氧化物特征的偏置电压具有阈值。对于具有自然表面氧化物层的Si（100）表面，阈值电压为5-6V。当偏置电压超过阈值时，氧化物特征的尺寸随着偏置电压的增加而增加。特别地，产生的氧化物的高度对偏置电压的变化敏感。另外，证明了通过局部氧化处理成功地制造了具有九个交叉点（1500x1500x2.6 nm〜3）的纵横交错的氧化线。相交的高度比氧化物线的高度高约0.6nm。这表明在先前产生的氧化线上新形成了氧化特征。

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