Surface charging effects on current stability of AlGaN/GaN HEMTs

机译：表面充电对AlGaN / GaN HEMT电流稳定性的影响

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摘要

Using a dual-gate transistor structure, we have evaluated the effect of off-bias-stress spatially induced surface charging at the AlGaN/GaN surface. Pulsed voltage stress on the drain access region led only to increase in the on-resistance, whereas the stress on the source region additionally decreased the saturation drain current. In addition, significant surface charging in the access region resulted in a threshold voltage shift. The 2D potential simulation indicated that surface negative charges modulate the potential distribution near the gate edge. It was also found that such surface charging can extend as far as 0.5 μm from the stressing gate edge.

机译：使用双栅晶体管结构，我们已经评估了偏偏置应力在空间上引起的AlGaN / GaN表面电荷的影响。漏极访问区上的脉冲电压应力仅导致导通电阻增加，而源极区上的应力另外降低了饱和漏极电流。此外，访问区域中的大量表面电荷导致阈值电压偏移。二维电势模拟表明，表面负电荷可调节栅极边缘附近的电势分布。还发现，这种表面电荷可以从应力栅极边缘延伸多达0.5μm。

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来源
《2014 IEEE International Meeting for Future of Electron Devices, Kansai》|2014年|1-3|共3页
会议地点 Kyoto(JP)
作者
Nishiguchi Kenya; Hashizume Tamotsu;
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作者单位

Research Center for Integrated Quantum Electronics, Hokkaido University, Sapporo, Japan;

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会议组织
原文格式 PDF
正文语种 eng
中图分类
关键词
Aluminum gallium nitride; Gallium nitride; HEMTs; Logic gates; MODFETs; Stress; Surface charging; AlGaN; GaN; HEMT; current collapse;

机译：氮化铝镓；氮化镓HEMT；逻辑门MODFET;强调;表面充电；氮化铝镓;氮化镓; HEMT；当前崩溃；;

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专利

1. Influence of Surface Defect Charge at AlGaN-GaN-HEMT Upon Schottky Gate Leakage Current and Breakdown Voltage [J] . Wataru Saito, Masahiko Kuraguchi, Yoshiharu Takada, IEEE Transactions on Electron Devices . 2005,第2期

机译：AlGaN-GaN-HEMT表面缺陷电荷对肖特基栅漏电流和击穿电压的影响
2. Charge-Based Compact Model of Gate Leakage Current for AlInN/GaN and AlGaN/GaN HEMTs [J] . Debnath Ankur, DasGupta Nandita, DasGupta Amitava IEEE Transactions on Electron Devices . 2020,第3期

机译：Alinn / GaN和Algan / GaN Hemts的电荷基于闸门漏电流的紧凑型号
3. Effects of Gate Field Plates on the Surface State Related Current Collapse in AlGaN/GaN HEMTs [J] . Huang H., Liang Y.C., Samudra G.S., IEEE Transactions on Power Electronics . 2014,第5期

机译：栅极场板对AlGaN / GaN HEMT中表面状态相关电流塌陷的影响
4. Surface charging effects on current stability of AlGaN/GaN HEMTs [C] . Nishiguchi Kenya, Hashizume Tamotsu Institute of Electrical and Electronics Engineers International Meeting for Future of Electron Devices, Kansai . 2014

机译：表面充电对AlGaN / GaN Hemts电流稳定性的影响
5. Treatment of the Impacts of Transport Inflexion Points and Charge Trapping at the Surface States on Drain Current of AlGaN/GaN HFETs. [D] . Loghmany, Alireza. 2010

机译：处理表面状态的传输拐点和电荷陷阱对AlGaN / GaN HFET漏极电流的影响。
6. Donor-Like Surface Traps on Two-Dimensional Electron Gas and Current Collapse of AlGaN/GaN HEMTs [O] . Chen-hui Yu, Qing-zhou Luo, Xiang-dong Luo, 2013

机译：二维电子气上的供体样表面陷阱以及AlGaN / GaN HEMT的电流崩塌
7. Influence of gate leakage current on AlGaN/GaN HEMTs evidenced by low frequency noise and pulsed electrical measurements Influence of gate leakage current on AlGaN/GaN HEMTs evidenced by pulsed I-V and low frequency noise measurements [O] . Karboyan Serge, Tartarin Jean-Guy, Rzin M, 2013

机译：栅极漏电流对alGaN / GaN HEmT的影响由低频噪声和脉冲电测量证明，栅极漏电流对alGaN / GaN HEmT的影响由脉冲I-V和低频噪声测量证明
8. Comparison of Surface Passivation Films for Reduction of Current Collapse in AlGaN/GaN High Electron Mobility Transistors (HEMTs) [R] . Fitch, R. , Gillespie, J. , Jenkins, T. , 2002

机译：用于减少alGaN / GaN高电子迁移率晶体管（HEmT）中电流崩塌的表面钝化膜的比较

Surface charging effects on current stability of AlGaN/GaN HEMTs

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