Modeling approaches for band-structure calculation in III-V FET quantum wells

机译：III-V FET量子阱中能带结构计算的建模方法

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We compare band-structure calculations obtained with modeling approaches hierarchically spanning from density functional theory to tight-binding, k·p and non-parabolic effective mass descriptions. We consider III-V quantum-wells with thickness ranging from 3nm to 10nm. Comparison with experiments for unstrained and strained InGaAs quantum-wells is also reported.

机译：我们比较了通过建模方法获得的能带结构计算，这些建模方法从密度泛函理论到紧束缚，k·p和非抛物线有效质量描述分层跨越。我们考虑厚度范围为3nm至10nm的III-V量子阱。还报道了与未应变和应变的InGaAs量子阱的实验比较。

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来源
《2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon》|2015年|101-104|共4页
会议地点 Bologna(IT)
作者
Caruso E.; Zerveas G.; Baccarani G.; Czornomaz L.; Daix N.; Esseni D.; Gnani E.; Gnudi A.; Grassi R.; Luisier M.; Markussen T.; Palestri P.; Schenk A.; Selmi L.; Sousa M.; Stokbro K.; Visciarelli M.;
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作者单位

DIEGM, Univ. of Udine, Udine, Italy;

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原文格式 PDF
正文语种 eng
中图分类
关键词
DFT; III-V compounds; band-structure;

机译：DFT; III-V族化合物;能带结构;

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1. Comprehensive comparison and experimental validation of band-structure calculation methods in III-V semiconductor quantum wells [J] . Zerveas George, Caruso Enrico, Baccarani Giorgio, Solid-State Electronics . 2016,第JANaPTaB期

机译：III-V半导体量子阱中能带结构计算方法的综合比较和实验验证
2. Modeling of Charge and Quantum Capacitance in Low Effective Mass III-V FinFETs [J] . Mohit D. Ganeriwala, Chandan Yadav, Nihar R. Mohapatra, Electron Devices Society, IEE . 2016,第6期

机译：低有效质量III-V FinFET中的电荷和量子电容建模
3. Quantum critical transition from Kondo insulator to metallic state studied by band-structure calculations for doped compounds: CeRhSb and CeNiSn [J] . Goraus J., ?lebarski A. Physica status solidi, B. Basic research . 2013,第3期

机译：通过能带结构计算掺杂化合物CeRhSb和CeNiSn研究了从近藤绝缘子到金属态的量子临界转变
4. Modeling approaches for band-structure calculation in III-V FET quantum wells [C] . Caruso E., Zerveas G., Baccarani G., Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon . 2015

机译：III-V FET量子阱中带状结构计算的建模方法
5. Band-structure calculations for one- and two-dimensional defects in zinc-blende III-V nitrides. [D] . Pentaleri, E. A. 1996

机译：闪锌矿III-V氮化物中一维和二维缺陷的能带结构计算。
6. QuantumMechanical Calculation of Noncovalent Interactions:A Large-Scale Evaluation of PMx DFT and SAPT Approaches [O] . Amanda Li, Hari S. Muddana, §, -1

机译：量子非共价相互作用的机械计算：PMxDFT和SAPT方法的大规模评估
7. Full-quantum modeling of III-V Tunnel-FETs architectures [O] . Elena Gnani, Michele Visciarelli, Antonio Gnudi, 2018

机译：III-V隧道 - FET架构的全量子建模

Modeling approaches for band-structure calculation in III-V FET quantum wells

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