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首页> 外文会议>2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon >Analytical approach to consider Gaussian junction profiles in compact models of tunnel-FETs
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Analytical approach to consider Gaussian junction profiles in compact models of tunnel-FETs

机译：在隧道FET的紧凑模型中考虑高斯结轮廓的分析方法

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摘要

The impact of Gaussian-shaped doping-profiles on the potential and the current transfer characteristics of an Double-Gate (DG) Tunnel-FET (TFET) is investigated in this paper. Based on results of the analysis, a simple model by solving Poisson's equation is developed. The model is able to calculate the potential difference in the channel region caused by the applied doping gradient. Considering the modifications in the two-dimensional (2D) potential profile the band-to-band (B2B) and trap-assisted-tunneling (TAT) current are calculated with help of Wentzel-Kramers-Brillouin (WKB) approximation and Landauer transmission theory. The results are validated by comparison with TCAD simulation data.
机译：本文研究了高斯形状的掺杂轮廓对双栅（DG）隧道FET（TFET）的电势和电流传输特性的影响。根据分析结果，通过求解泊松方程建立了一个简单的模型。该模型能够计算由施加的掺杂梯度引起的沟道区域中的电势差。考虑到二维（2D）电位分布的修改，借助Wentzel-Kramers-Brillouin（WKB）近似和Landauer传输理论，计算了带对带（B2B）和陷阱辅助隧道（TAT）电流。通过与TCAD仿真数据进行比较来验证结果。

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