Photoluminescence characterization of carrier recombination centers in 4H-SiC substrates by utilizing below gap excitation

机译：利用以下间隙激发表征4H-SiC衬底中载流子复合中心的光致发光特性

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Summary form only given. The complete presentation was not made available for publication as part of the conference proceedings. Though the crystal growth technology of SiC is improving steadily, it is still crucial to reduce crystalline defects which act as carrier recombination (CR) centers and deteriorate device performance. We detected CR centers in a p-type 4H-SiC substrate by observing the intensity change of photoluminescence due to the addition of a below-gap excitation (BGE) light of 0.93 eV. We noticed the temperature and the BGE density dependence of band edge (BE) emission in addition to donor acceptor pair (DAP) emission and discriminated the temperature effect from that of BGE. The BGE density dependence of the PL intensity quenching is different among the BE emission, B0- and C0-lines of the DAP, respectively. It gives us an important clue for understanding CR mechanisms inside the bandgap of SiC.

机译：仅提供摘要表格。完整的演示文稿未作为会议记录的一部分公开发布。尽管SiC的晶体生长技术正在稳步改善，但减少用作载流子复合（CR）中心并降低器件性能的晶体缺陷仍然至关重要。我们通过观察由于添加了0.93 eV的间隙以下激发（BGE）光引起的光致发光强度变化，在p型4H-SiC衬底中检测到CR中心。除了给体受体对（DAP）发射，我们还注意到了带边缘（BE）发射的温度和BGE密度依赖性，并且将温度效应与BGE的温度效应区分开。在DAP的BE发射，B0和C0线之间，PL强度猝灭的BGE密度依赖性不同。这为我们了解SiC带隙内部的CR机制提供了重要线索。

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来源
《2016 European Conference on Silicon Carbide amp; Related Materials》|2016年|1-1|共1页
会议地点 Halkidiki(GR)
作者
K. Kondo; N. Kamata; H. Yaguchi; S. Yagi; T. Fukuda; Z. Honda;
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作者单位

Department of Functional Materials Science, Saitama University 255 Shimo-Okubo, Sakura-ku, Saitama 338-8570, Japan;

Department of Functional Materials Science, Saitama University 255 Shimo-Okubo, Sakura-ku, Saitama 338-8570, Japan;

Department of Functional Materials Science, Saitama University 255 Shimo-Okubo, Sakura-ku, Saitama 338-8570, Japan;

Department of Functional Materials Science, Saitama University 255 Shimo-Okubo, Sakura-ku, Saitama 338-8570, Japan;

Department of Functional Materials Science, Saitama University 255 Shimo-Okubo, Sakura-ku, Saitama 338-8570, Japan;

Department of Functional Materials Science, Saitama University 255 Shimo-Okubo, Sakura-ku, Saitama 338-8570, Japan;

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正文语种 eng
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关键词
Temperature measurement; Photoluminescence; Substrates; Silicon carbide; Image edge detection; Wavelength measurement; Crystals;

机译：温度测量;光致发光;基板;碳化硅;图像边缘检测;波长测量;晶体;

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专利

1. Photoluminescence Characterization of Carrier Recombination Centers in 4H-SiC Substrates by Utilizing Below Gap Excitation [J] . K. Kondo, N. Kamata, H. Yaguchi, Materials science forum . 2017,第期

机译：利用低于能隙激发的4H-SiC衬底载流子复合中心的光致发光特性
2. Temperature- and excitation-dependent carrier diffusivity and recombination rate in 4H-SiC [J] . ??ajev P., Jara?iunas K. Journal of Physics, D. Applied Physics: A Europhysics Journal . 2013,第26期

机译：4H-SiC中依赖于温度和激发的载流子扩散率和复合率
3. Impacts of recombination at the surface and in the substrate on carrier lifetimes of n-type 4H-SiC epilayers [J] . Tsunenobu Kimoto, Toru Hiyoshi, Toshihiko Hayashi, Journal of Applied Physics . 2010,第8期

机译：表面和衬底中复合对n型4H-SiC外延层载流子寿命的影响
4. Photoluminescence characterization of carrier recombination centers in 4H-SiC substrates by utilizing below gap excitation [C] . K. Kondo, N. Kamata, H. Yaguchi, European Conference on Silicon Carbide Related Materials . 2016

机译：通过低于间隙激发，在4H-SiC基材中的光致发光表征载体重组中心
5. Defect Characterization of 4H-SiC Substrates Using Synchrotron X-ray Topography [D] . Ailihumaer, Tuerxun. 2018

机译：同步X射线形貌表征4H-SiC衬底的缺陷
6. Layered rare-earth hydroxide and oxide nanoplates of the Y/Tb/Eu system: phase-controlled processing structure characterization and color-tunable photoluminescence via selective excitation and efficient energy transfer [O] . Xiaoli Wu, Ji-Guang Li, Jinkai Li, 2013

机译：Y / Tb / Eu系统的层状稀土氢氧化物和氧化物纳米板：相控处理结构表征和通过选择性激发和有效的能量转移实现的颜色可调光致发光
7. Confocal photoluminescence characterization of silicon-vacancy color centers in 4H-SiC fabricated by a femtosecond laser [O] . Jiayu Liu, Zongwei Xu, Ying Song, 2020

机译：由飞秒激光器制造的4H-SiC硅空位色中心的共聚焦光致发光表征

Photoluminescence characterization of carrier recombination centers in 4H-SiC substrates by utilizing below gap excitation

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