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首页> 外文会议>2016 IEEE 37th International Electronics Manufacturing Technology amp; 18th Electronics Materials and Packaging Conference >Measurement of the strength of a grain boundary in electroplated copper thin-film interconnections by using micro tensile-test
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Measurement of the strength of a grain boundary in electroplated copper thin-film interconnections by using micro tensile-test

机译：用微拉伸试验测量电镀铜薄膜互连中的晶界强度

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In this study, a micro tensile test method that can measure the interface strength of a grain boundary has been developed by applying an EBSD (Electron Back-Scatter Diffraction) method and a FIB (Focused Ion Beam) system, and it was applied to evaluate the effect of the crystallinity of a grain boundary on the strength of electroplated copper thin films quantitatively. The position and crystallinity of a grain boundary in a polycrystalline electroplated copper thin film were preliminarily determined by EBSD method, and the micro scale test specimen was cut out from the appropriate area in the film by using FIB. Therefore, a bicrystal sample which consisted of the characterized single grain boundary was cut from a polycrystalline thin film, and the strength of one grain or one grain boundary was measured quantitatively. In this study, the crystallinity of grains and grain boundaries was evaluated by using Image Quality (IQ) value obtained from the EBSD method. As a result, the fracture mode and strength of the polycrystalline copper thin films were found to vary drastically depending on the crystallinity of the grain boundary. The specimens including a grain boundary with average IQ value lower than 3500 showed brittle fracture at the grain boundary. On the other hand, in the specimens with average IQ value higher than 3500 showed ductile transgranular fracture. In addition, it was confirmed that the strength of a grain boundary with average IQ value lower than 3500 decreased with decreasing the IQ value and the yield strength of a grain decreased with increasing the average IQ value of a grain. It is, therefore, very important to control the crystallinity for assuring the stable and reliable operation of thin film devices using the electroplated copper interconnections.
机译：在这项研究中，通过应用EBSD（电子背散射衍射）方法和FIB（聚焦离子束）系统，开发了一种可以测量晶界界面强度的微拉伸试验方法，并将其用于评估晶界的结晶度对电镀铜薄膜强度的定量影响。通过EBSD方法预先确定了多晶电镀铜薄膜中晶界的位置和结晶度，并使用FIB从膜中的适当区域切出了微型测试样品。因此，从多晶薄膜上切下由特征的单晶界构成的双晶样品，定量地测定1个晶界或1个晶界的强度。在这项研究中，使用从EBSD方法获得的图像质量（IQ）值评估了晶粒的结晶度和晶界。结果，发现多晶铜薄膜的断裂模式和强度根据晶界的结晶度而急剧变化。包括平均IQ值低于3500的晶界的样品在晶界显示出脆性断裂。另一方面，在平均IQ值高于3500的标本中，显示出延性的经晶状体骨折。另外，可以确认的是，平均IQ值低于3500的晶界的强度随着IQ值的降低而降低，并且晶粒的屈服强度随着晶粒的平均IQ值的提高而降低。因此，控制结晶度对于确保使用电镀铜互连的薄膜器件的稳定和可靠操作非常重要。

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