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首页> 外文会议>IEEE International Electronics Manufacturing Technology Conference >Measurement of the strength of a grain boundary in electroplated copper thin-film interconnections by using micro tensile-test
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Measurement of the strength of a grain boundary in electroplated copper thin-film interconnections by using micro tensile-test

机译：通过使用微拉伸试验测量电镀铜薄膜互连中晶界强度的测量

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In this study, a micro tensile test method that can measure the interface strength of a grain boundary has been developed by applying an EBSD (Electron Back-Scatter Diffraction) method and a FIB (Focused Ion Beam) system, and it was applied to evaluate the effect of the crystallinity of a grain boundary on the strength of electroplated copper thin films quantitatively. The position and crystallinity of a grain boundary in a polycrystalline electroplated copper thin film were preliminarily determined by EBSD method, and the micro scale test specimen was cut out from the appropriate area in the film by using FIB. Therefore, a bicrystal sample which consisted of the characterized single grain boundary was cut from a polycrystalline thin film, and the strength of one grain or one grain boundary was measured quantitatively. In this study, the crystallinity of grains and grain boundaries was evaluated by using Image Quality (IQ) value obtained from the EBSD method. As a result, the fracture mode and strength of the polycrystalline copper thin films were found to vary drastically depending on the crystallinity of the grain boundary. The specimens including a grain boundary with average IQ value lower than 3500 showed brittle fracture at the grain boundary. On the other hand, in the specimens with average IQ value higher than 3500 showed ductile transgranular fracture. In addition, it was confirmed that the strength of a grain boundary with average IQ value lower than 3500 decreased with decreasing the IQ value and the yield strength of a grain decreased with increasing the average IQ value of a grain. It is, therefore, very important to control the crystallinity for assuring the stable and reliable operation of thin film devices using the electroplated copper interconnections.
机译：在这项研究中，可以测量晶粒边界的界面强度的微拉伸试验方法已通过施加EBSD（电子背散射衍射）法和FIB（聚焦离子束）系统中显影，并且它被用于评估上电镀铜薄膜定量的强度的晶界的结晶性的效果。晶界的多晶电镀铜薄膜的位置和结晶度进行了初步通过EBSD法测定，和微观尺度试验片从相应的区域中的膜通过使用FIB切出。因此，其由所述单表征晶界的双晶样品从一个多晶薄膜切开，并定量测定一种晶粒或一种晶界的强度。在这项研究中，晶粒和晶界的结晶度通过使用从EBSD法得到的图像质量（IQ）值进行评价。其结果是，该多晶铜薄膜的断裂模式和强度被发现依赖于晶界的结晶性急剧变化。包括与平均IQ值超过3500以下的晶界的标本显示脆性断裂在晶界。在另一方面，在具有平均IQ值超过3500越高标本显示延性穿晶断裂。另外，可以确认，与平均IQ值的晶粒边界的强度低于3500与降低IQ值和晶的屈服强度随着晶粒的平均IQ值下降减小。它是，因此，非常重要的是控制结晶度对于确保使用电镀铜互连的薄膜器件的稳定和可靠运行。

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