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首页> 外文会议>2016 IEEE 37th International Electronics Manufacturing Technology amp; 18th Electronics Materials and Packaging Conference >Reliability considerations of sintered silver paste on clip semiconductor packages
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Reliability considerations of sintered silver paste on clip semiconductor packages

机译：夹式半导体封装上烧结银浆的可靠性考虑

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Sintered Ag has gained attention as a replacement for high lead applications due to its high thermal, electrical and reliability performance. Today, the temperature requirements for certain business units require higher levels of capability. Coupled with the pressures of converting to lead free, a feasible solution needs to be reached soon. This led to the formation of the DA5 (die attach 5) consortium in 2010. This was composed of semiconductor companies NXP, STMicroelectronics, Freescale, Infineon and Bosch. The main purpose was to look for alternative materials that can support application requirements exceeding the capabilities of solders. Although lab scale tests shows that sinter Ag can be an alternative, limited data is available on sintered Ag performance integrated with high power device applications. Samples were assembled using sinter Ag die attach material on using a Zener diode housed on a clip package. The experimental method was divided in two phases: material characterization at varying amounts of N2 and reliability phase which subjects these units to Temperature Cycle, Highly Accelerated Stress Test (HAST), and Autoclave. All samples underwent normal assembly except for the sintering process which is necessary for silver die attach to achieve solid state diffusion. Microstructure analysis of sinter Ag die attach results into denser formation of sinter Ag paste when subjected to low N2 concentration. Die shear results were highest at low N2 concentration due to increased grain boundary formation over the sinter Ag matrix. However, low N2 concentration leads to copper oxidation which is detrimental on surface adhesion between of the lead frame and mold compound. This was observed during the characterization step wherein oxides were formed on the lead frame surface. Subjecting the copper lead frame with gross oxide formation led to failures at autoclave test. Scanning acoustic tomography reveals gross separation of lead frame to mold compound interface. Also, we have determined that silver migration is a key failure mechanism for sinter Ag die attach when subjected at high N2 concentration. The reliability results for mid and low N2 sintering atmosphere show resistive effect on Ag migration. The overall outlook for Sinter Ag based on the current experimentation suggests that sinter Ag could be a viable solution provided that these key failure mechanisms are addressed and fully understood.
机译：烧结银由于其高的热，电和可靠性能而作为高铅应用的替代品而受到关注。如今，某些业务部门对温度的要求需要更高水平的功能。加上转换为无铅的压力，需要尽快找到可行的解决方案。这导致在2010年成立了DA5（晶粒附着5）联盟。该联盟由NXP，意法半导体，飞思卡尔，英飞凌和博世等半导体公司组成。主要目的是寻找能够满足超出焊料能力的应用需求的替代材料。尽管实验室规模的测试表明烧结银可以替代，但有关与高功率器件应用集成的烧结银性能的数据有限。样品使用烧结Ag芯片附着材料组装，并使用装在夹子包装中的齐纳二极管进行组装。实验方法分为两个阶段：在不同的N2量下进行材料表征和可靠性阶段，该阶段将这些单元进行温度循环，高加速应力测试（HAST）和高压灭菌。除烧结过程外，所有样品均进行了常规组装，而烧结过程是附着银模以实现固态扩散所必需的。烧结银模头附着物的微观结构分析结果表明，在低N2浓度下，烧结银浆的致密形成。在低N2浓度下，由于在烧结Ag基体上增加了晶界形成，模切结果最高。但是，低的N2浓度会导致铜氧化，这对引线框和模塑化合物之间的表面粘附性有害。在表征步骤中观察到了这一点，其中在引线框架表面上形成了氧化物。使铜引线框架形成粗大氧化物会导致高压灭菌器测试失败。扫描声波断层扫描显示引线框与模塑料界面之间完全分离。同样，我们已经确定，当在高N2浓度下进行银烧结时，银迁移是烧结Ag芯片的关键失效机理。中低N2烧结气氛的可靠性结果显示了对Ag迁移的抵抗作用。根据当前实验，烧结银的总体前景表明，只要解决并充分理解这些关键的失效机理，烧结银就可以成为可行的解决方案。

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