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Reliability considerations of sintered silver paste on clip semiconductor packages

机译：夹子半导体包装上的烧结银浆的可靠性考虑因素

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Sintered Ag has gained attention as a replacement for high lead applications due to its high thermal, electrical and reliability performance. Today, the temperature requirements for certain business units require higher levels of capability. Coupled with the pressures of converting to lead free, a feasible solution needs to be reached soon. This led to the formation of the DA5 (die attach 5) consortium in 2010. This was composed of semiconductor companies NXP, STMicroelectronics, Freescale, Infineon and Bosch. The main purpose was to look for alternative materials that can support application requirements exceeding the capabilities of solders. Although lab scale tests shows that sinter Ag can be an alternative, limited data is available on sintered Ag performance integrated with high power device applications. Samples were assembled using sinter Ag die attach material on using a Zener diode housed on a clip package. The experimental method was divided in two phases: material characterization at varying amounts of N2 and reliability phase which subjects these units to Temperature Cycle, Highly Accelerated Stress Test (HAST), and Autoclave. All samples underwent normal assembly except for the sintering process which is necessary for silver die attach to achieve solid state diffusion. Microstructure analysis of sinter Ag die attach results into denser formation of sinter Ag paste when subjected to low N2 concentration. Die shear results were highest at low N2 concentration due to increased grain boundary formation over the sinter Ag matrix. However, low N2 concentration leads to copper oxidation which is detrimental on surface adhesion between of the lead frame and mold compound. This was observed during the characterization step wherein oxides were formed on the lead frame surface. Subjecting the copper lead frame with gross oxide formation led to failures at autoclave test. Scanning acoustic tomography reveals gross separation of lead frame to mold compound interface. Also, we have determined that silver migration is a key failure mechanism for sinter Ag die attach when subjected at high N2 concentration. The reliability results for mid and low N2 sintering atmosphere show resistive effect on Ag migration. The overall outlook for Sinter Ag based on the current experimentation suggests that sinter Ag could be a viable solution provided that these key failure mechanisms are addressed and fully understood.
机译：由于其高热，电气和可靠性性能，烧结AG作为高铅应用的替代品。如今，某些业务单位的温度要求需要更高的能力水平。再加上转换以无铅的压力，很快需要达到可行的解决方案。这导致了2010年的DA5（DIE附加5）联盟的形成。这由半导体公司NXP，STMicroelectronics，Freescale，英飞凌和博世组成。主要目的是寻找可以支持超出焊料能力的应用要求的替代材料。虽然实验室比例测试显示Sinter AG可以是替代的，但有限的数据可用于集成的具有高功率设备应用程序的烧结AG性能。在使用容纳在夹子封装在夹子封装在夹子封装在夹子封装在夹子封装在夹子包装上的齐纳二极管上，使用烧结二极管组装样品。实验方法分为两相：以不同量的N 2和可靠性相对于温度循环，高度加速应力测试（Hast）和高压釜的可靠性相位，以不同量的N 2和可靠性相位进行材料表征。除了用于达到固态扩散的烧结过程之外，所有样品都接受了正常组件，除了烧结过程，以实现固态扩散。烧结Ag模具的微观结构分析在经受低N 2浓度时将结果加入烧结烧渣的密度形成。由于烧结Ag基质上增加了晶界形成，模具剪切结果在低N 2浓度下是最高的。然而，低N 2浓度导致铜氧化，这对引线框架和模具化合物之间的表面粘附有害。在表征步骤期间观察到这，其中在引线框架表面上形成氧化物。使铜引线框架具有总氧化物形成导致高压釜试验的故障。扫描声学断层扫描揭示了引线框架的总分离成模复化合物界面。此外，我们已经确定了银迁移是在高N2浓度受到时烧结AG模具附着的关键故障机制。中低N2烧结气氛的可靠性结果显示对AG迁移的电阻效果。基于当前实验的Sinter AG的总体前景表明，Sinter AG可能是一种可行的解决方案，条件是解决这些关键故障机制并完全理解。

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