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High aspect ratio deep trench termination (HARDT) technique surrounding die edge as dielectric wall to improve high voltage device area efficiency

机译:高纵横比深沟槽终端(HARDT)技术围绕芯片边缘作为电介质壁,以提高高压器件的面积效率

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摘要

In high voltage power devices, to improve an active device area efficiency, a new edge termination structure that applying high aspect ratio deep trench termination technique is presented. The narrow trench filled with dielectric material acts as not only an electric field relaxing layer but also a reliable hard passivation. By using this technique, the active device area efficiency is maximized up to 96% with high reliability and good dynamic characteristics for 500 to 600 V MOSFETs.
机译:在高压功率器件中,为了提高有源器件的面积效率,提出了一种采用高深宽比深沟槽终止技术的新型边缘终止结构。充满电介质材料的狭窄沟槽不仅充当电场缓和层,而且还充当可靠的硬钝化层。通过使用这种技术,有源器件的面积效率最大可提高至96%,同时具有500至600 V MOSFET的高可靠性和良好的动态特性。

著录项

  • 来源
  • 会议地点 Sapporo(JP)
  • 作者单位

    Advanced Discrete Development Center, Discrete Semiconductor Division, Storage Electronic Devices Solutions Company, Toshiba Corporation, Nomi, Ishikawa, Japan;

    Advanced Discrete Development Center, Discrete Semiconductor Division, Storage Electronic Devices Solutions Company, Toshiba Corporation, Nomi, Ishikawa, Japan;

    Advanced Discrete Development Center, Discrete Semiconductor Division, Storage Electronic Devices Solutions Company, Toshiba Corporation, Nomi, Ishikawa, Japan;

    Advanced Discrete Development Center, Discrete Semiconductor Division, Storage Electronic Devices Solutions Company, Toshiba Corporation, Nomi, Ishikawa, Japan;

    Advanced Discrete Development Center, Discrete Semiconductor Division, Storage Electronic Devices Solutions Company, Toshiba Corporation, Nomi, Ishikawa, Japan;

    Advanced Discrete Development Center, Discrete Semiconductor Division, Storage Electronic Devices Solutions Company, Toshiba Corporation, Nomi, Ishikawa, Japan;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    dielectric materials; electric fields; passivation; power MOSFET;

    机译:介电材料;电场;钝化;功率MOSFET;

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