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首页> 外文会议>The 3rd International Symposium on Material Chemistry in Nuclear Environment (Material Chemistry '02 MC'02) Mar 13-15, 2002 Tsukuba >ULTRA-HIGH TEMPERATURE OXIDATION BEHAVIOR OF CHEMICAL VAPOR DEPOSITED SILICON CARBIDE LAYERS
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ULTRA-HIGH TEMPERATURE OXIDATION BEHAVIOR OF CHEMICAL VAPOR DEPOSITED SILICON CARBIDE LAYERS

机译：化学气相沉积碳化硅层的超高温氧化行为

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摘要

The active oxidation, passive oxidation and bubble formation of CVD SiC were studied in O_2 and CO_2 at temperatures from 1650 to 2000K. The active oxidation rates in O_2 increased with increasing oxygen partial pressure (P_(O2)); however, those in CO_2 showed the maxima at specific P_(O2). The passive oxidation kinetics in O_2 were either linear-parabolic or parabolic depending on temperature and P_(O2), whereas that in CO_2 was always parabolic. The activation energies for the parabolic oxidation in O_2 and CO_2 were 210 and 150kJ/mol, respectively, suggesting different rate-determining process between these atmospheres. The bubble formation was controlled by temperature and P_(O2) being independent of oxidant gas species
机译：研究了O_2和CO_2在1650〜2000K温度下CVD SiC的主动氧化，被动氧化和气泡形成。 O_2中的活性氧化速率随氧分压（P_（O2））的增加而增加；但是，CO_2中的那些在特定P_（O2）处显示最大值。根据温度和P_（O2），O_2中的被动氧化动力学是线性抛物线动力学或抛物线动力学，而CO_2中的被动氧化动力学始终是抛物线动力学。 O_2和CO_2中抛物线氧化的活化能分别为210和150kJ / mol，表明这些气氛之间的速率决定过程不同。通过温度控制气泡的形成，P_（O2）与氧化剂气体的种类无关

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