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首页> 外文会议>International Symposium on Material Chemistry in Nuclear Environment >Ultra-high temperature oxidation behavior of chemical vapor deposited silicon carbide layers
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Ultra-high temperature oxidation behavior of chemical vapor deposited silicon carbide layers

机译：化学气相沉积碳化硅层的超高温氧化行为

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The active oxidation, passive oxidation and bubble formation of CVD SiC were studied in O_2 and CO_2 at temperatures from 1650 to 2000K. The active oxidation rates in O_2 increased with increasing oxygen partial pressure (P_(O2)); However, those in CO_2 showed the maxima at specific P_(O2). The passive oxidation kinetics in O_2 were either linear-parabolic or parabolic depending on temperature and P_(O2), whereas that in CO_2 was always parabolic. The activation energies for the parabolic oxidation in O_2 and CO_2 were 210 and 150kJ/mol, respectively, suggesting different rate-determining process between these atmospheres. The bubble formation was controlled by temperature and P_(O2) being independent of oxidant gas species.
机译：在O_2和CO_2在1650至2000K的温度下在O_2和CO_2中研究了CVD SiC的主动氧化，被动氧化和泡沫形成。 O_2中的活性氧化速率随着氧分压的增加而增加（P_（O2））;然而，CO_2中的那些在特定P_（O2）处显示了最大值。根据温度和P_（O 2），O_2中的被动氧化动力学是直链抛物型或抛物线，而在CO_2中总是抛物线。 O_2和CO_2中抛物型氧化的激活能量分别为210和150kJ / mol，表明这些大气之间的不同速率确定过程。通过温度和P_（O2）控制气泡形成，与氧化剂气体物质无关。

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