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首页> 外文会议>Advances in resist materials and processing technology XXVI >Properties of the novel de-protecting unit for next generation ArF resist polymer
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Properties of the novel de-protecting unit for next generation ArF resist polymer

机译：用于下一代ArF抗蚀剂聚合物的新型脱保护单元的性能

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摘要

Viewpoint of lithographic performance, the chemically amplified resist (CAR) is still promising candidates for the 32 nm node device manufacturing or below. However, CAR has an issue of low exposure latitude (EL) in the above node. To overcome the issue, it is important to control the acid diffusion at de-protecting process of the lithography system. We focused on a monomer unit that is able to control the acid diffusion during the post exposure bake (PEB) process. A novel secondary ester type methacrylate monomer was designed and synthesized as the unit that generates acid trapping ability according to the de-protecting reaction. The de-protecting reaction proceeded at general condition, and the acid trapping ability was confirmed by the model reaction in the solution. The unit must be useful as the adjusting unit of the acid diffusion. We also investigated the copolymers having this adjusting unit and the typical tertiary ester de-protecting unit for ArF resist main polymer. We will discuss the feature of the polymer including the de-protecting unit and its applications for next generation ArF chemically amplified resist.
机译：从光刻性能的角度来看，化学放大抗蚀剂（CAR）仍有望用于32 nm或以下的节点器件制造。但是，CAR在上述节点中存在一个低曝光纬度（EL）的问题。为了克服该问题，重要的是在光刻系统的脱保护过程中控制酸扩散。我们专注于能够在曝光后烘烤（PEB）过程中控制酸扩散的单体单元。设计并合成了一种新型的仲酯型甲基丙烯酸酯单体，作为根据脱保护反应产生酸捕获能力的单元。脱保护反应在一般条件下进行，并且通过溶液中的模型反应确认了酸捕获能力。该单元必须用作酸扩散的调节单元。我们还研究了具有该调节单元和ArF抗蚀剂主聚合物典型的叔酯脱保护单元的共聚物。我们将讨论包括脱保护单元在内的聚合物的功能及其在下一代ArF化学放大抗蚀剂中的应用。

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  • 会议地点 San Jose CA(US)
  • 作者

    Akinori Shibuya; Shuhei Yamaguchi; Yuko Yoshida; Michihiro Shirakawa;

  • 作者单位

    RD management headquarter, Synthetic Organic Chemistry Laboratories, FUJIFILM Corporation Kawashiri 4000, Yoshida-cho, Haibara-gun, Shizuoka, 421-0396, Japan;

    RD management headquarter, Synthetic Organic Chemistry Laboratories, FUJIFILM Corporation Kawashiri 4000, Yoshida-cho, Haibara-gun, Shizuoka, 421-0396, Japan;

    RD management headquarter, Synthetic Organic Chemistry Laboratories, FUJIFILM Corporation Kawashiri 4000, Yoshida-cho, Haibara-gun, Shizuoka, 421-0396, Japan;

    RD management headquarter, Electronic Materials Research Laboratories, FUJIFILM Corporation Kawashiri 4000, Yoshida-cho, Haibara-gun, Shizuoka, 421-0396, Japan;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    chemically amplified resist; ArF resist polymer; acid diffusion; exposure latitude;

    机译：化学放大的抗蚀剂； ArF抗蚀剂聚合物；酸扩散曝光范围;

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