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首页> 外文会议>Advances in Resist Technology and Processing XXIII pt.1 >Pattern defect study using cover material film in immersion lithography
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Pattern defect study using cover material film in immersion lithography

机译：在浸没式光刻中使用覆盖材料膜进行图案缺陷研究

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In immersion lithography, it is necessary that the surface of wafer has high hydrohybicity in order to prevent the residue of immersion fluid, i.e. pure water, that cause watermark defect. Usage of a cover material film over the resist film is effective to consistent with high hydrohybicity of the surface and high performance of resist film. But it was problem that much pattern deformation defects was observed with the use of an alkali-soluble type cover material film and an immersion exposure tool. As a result of the examination, it was identified that the fraction of film which caused the pattern deformation in the area of several micrometers were the fraction of the cover material. And the fractions of cover coat material were oriented in the coating defects of the cover material film and in the film peeling after scan of the immersion nozzle at the wafer bevel. The coating defects were improved with the chemical of the cover material. An adhesion process was effective to prevent the film peeling of cover material.
机译：在浸没式光刻中，为了防止浸入液即纯水的残留而引起水印缺陷，晶片表面必须具有高的疏水性。在抗蚀剂膜上使用覆盖材料膜对于与表面的高疏水性和抗蚀剂膜的高性能一致是有效的。但是问题是，使用碱溶型覆盖膜和浸没曝光工具观察到很多图案变形缺陷。检查的结果表明，在几微米的区域内引起图案变形的膜的分数是覆盖材料的分数。并且，在浸没喷嘴在晶片斜面处扫描之后，覆盖涂层材料的各部分在覆盖材料膜的涂覆缺陷中和在膜剥离中取向。通过覆盖材料的化学作用改善了涂层缺陷。粘合过程有效地防止了覆盖材料的膜剥离。

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