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首页> 外文会议>Annual solid state and diode laser technology review;SSDLTR 2009; 20090629-0702;20090629-0702; Newton, MA(US);Newton, MA(US) >Analysis of Laser Action and Thermal Management in Novel Semiconductor Structures
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Analysis of Laser Action and Thermal Management in Novel Semiconductor Structures

机译：新型半导体结构中的激光作用和热管理分析

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Growth of thin layers of erbium (Er)-doped gallium nitride (GaN) on undoped GaN substrates has been demonstrated [1]. This study considers the properties of lasers based on Er:GaN through thermal and stress modeling analyses and then by evaluating the potential performance of a multilayer ErGaN disk laser. The purpose of this study is to explore the potential benefits of using ErGaN because of its very high thermal conductivity. We have found that ErGaN lasers could be pumped with more power than Nd:YAG, ErYAG or Yb:YAG lasers of the same size. The ErGaN laser would reach lower temperatures and less stress than the others when pumped with the same pump power density. Because ErGaN can currently only be prepared in thin layers on GaN substrates, we considered a multilayer design that could be operated at 400-W output power in a diffraction-limited mode and be air-cooled by convection only. No other laser that we know of can operate in this fashion. If the problems of preparing a multilayer ErGaN laser can be overcome and if the optical and spectroscopic properties (unknown at present), are similar to ErYAG (as assumed in our modeling), this material will make possible many very useful lasers.
机译：已经证明了在未掺杂的GaN衬底上生长掺（（Er）的氮化镓（GaN）的薄层[1]。这项研究通过热和应力模型分析，然后通过评估多层ErGaN圆盘激光器的潜在性能，来考虑基于Er：GaN的激光器的性能。这项研究的目的是探究使用ErGaN的潜在优势，因为它具有很高的导热性。我们发现，与相同尺寸的Nd：YAG，ErYAG或Yb：YAG激光器相比，ErGaN激光器的泵浦功率更高。当以相同的泵浦功率密度泵浦时，ErGaN激光器将比其他激光器具有更低的温度和更少的应力。由于目前只能在GaN衬底上的薄层中制备ErGaN，因此我们考虑了一种多层设计，该设计可在400 W输出功率下以衍射极限模式运行，并且仅通过对流进行空气冷却。我们所知道的其他激光器无法以这种方式工作。如果可以克服制备多层ErGaN激光器的问题，并且如果光学和光谱特性（目前未知）类似于ErYAG（在我们的模型中假设），那么这种材料将使许多非常有用的激光器成为可能。

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