MEEF measurement and model verification for 0.3 kl lithography

机译：用于0.3 kl光刻的MEEF测量和模型验证

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The concept of Mask Error Enhancement Factor (MEEF) is introduced its impact on the future of semiconductor fabrication is explained. The effects of numerical aperture (NA), print bias, and exposure conditions on MEEF are explored using both theoretical and experimental methods

机译：介绍了掩模误差增强因子（MEEF）的概念，并解释了其对半导体制造未来的影响。使用理论和实验方法探讨了数值孔径（NA），打印偏斜和曝光条件对MEEF的影响

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来源
《Conference on Challenges in Process Integration and Device Technology 18-19 September 2000 Santa Clara, USA》|2000年|p.33-40|共8页
会议地点 Santa Clara CA(US)
作者
Colin R.Parker; Michael T.Reilly;
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原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
关键词
MEEF; mask error; bias; NA; OPC;

机译：MEEF;掩膜错误偏压; NA; OPC;

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MEEF measurement and model verification for 0.3 kl lithography

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