Low-k Etch/Ash for Copper Dual Damascene

机译：铜双镶嵌的低介电常数蚀刻/灰化

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We report the recent progress and issues related to low-k dielectric etch using TEL Unity II tools. Various low-k films have been evaluated in terms of etch and post-etch ash. Inorganic and Organo-Silicate Glass (Organic-Inorganic Hybrid) films can be etched by modified oxide etch chemistry. In contrast, Organic films are etched by non-fluorocarbon chemistry. Although etching the low-k films is not so difficult, the concern is the damage caused by etch or ash.

机译：我们报告使用TEL Unity II工具进行低k介电蚀刻的最新进展和相关问题。已经根据蚀刻和蚀刻后灰分评估了各种低k膜。无机和有机硅玻璃（有机-无机杂化）膜可以通过改进的氧化物蚀刻化学方法进行蚀刻。相反，有机膜是通过非碳氟化合物化学蚀刻而成的。尽管蚀刻低k膜并不那么困难，但关注的是蚀刻或灰化造成的损坏。

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来源
《Conference on Challenges in Process Integration and Device Technology 18-19 September 2000 Santa Clara, USA》|2000年|p.281-286|共6页
会议地点 Santa Clara CA(US)
作者
Tomoki Suemasa; Masaru Nishino; Kouichiro Inazawa; Vaidya N.B.; Eiichi Nishimura;
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原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
关键词
low-k; Dual Damascene; Organic; Inorganic; MSQ; porous; etch; ash; in-situ ash;

机译：低k双镶嵌有机;无机; MSQ；多孔蚀刻灰;原位灰;

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专利

1. Optimization of Cu/Low-k Dual Damascene Post-Etch Residue and TiN Hard Mask Removal [J] . Alexander Kabansky, Glenn Westwood, Samantha Tan, Diffusion and Defect Data. Solid State Data, Part B. Solid State Phenomena . 2016,第Null期

机译：Cu / Low-k双金属镶嵌蚀刻后残留物和TiN硬掩模去除的优化
2. Plasma-Etching Technology With In Situ Etched-Surf ace Modification for Highly Reliable Low-k/Cu Dual Damascene Interconnects [J] . Hiroto Ohtake, Shinobu Saito, Munehiro Tada, IEEE Transactions on Semiconductor Manufacturing . 2005,第4期

机译：具有原位蚀刻表面修饰的等离子蚀刻技术，可实现高度可靠的低k / Cu双镶嵌互连
3. Via-Shape-Control for Copper Dual-Damascene Interconnects With Low-k Organic Film [J] . Kinoshita K., Tada M., Hiroi M., IEEE Transactions on Semiconductor Manufacturing . 2008,第2期

机译：具有低k有机膜的铜双大马士革互连的通孔形状控制
4. Low-k Etch/Ash for Copper Dual Damascene [C] . Tomoki Suemasa, Masaru Nishino, Kouichiro Inazawa, Conference on challenges in process integration and device technology . 2000

机译：用于铜双镶嵌的Low-K蚀刻/灰
5. Electromigration enhanced kinetics of copper-tin intermetallic compounds in lead-free solder joints and copper low-k dual damascene processing using step and flash imprint lithography. [D] . Chao, Huang-Lin. 2009

机译：电迁移增强了无铅焊点中铜-锡金属间化合物的动力学，并使用分步和闪光压印光刻技术进行了铜低k双大马士革工艺。
6. A compact model for early electromigration failures of copper dual-damascene interconnects [O] . R.L. de Orio, H. Ceric, S. Selberherr -1

机译：铜双镶嵌互连的早期电迁移失败的紧凑模型
7. Porous Ultra Low-k Material Integration Through An Extended Dual Damascene Approach: Pre-/ Post-CMP Curing Comparison [O] . Calvo Jesús, Koch Johannes, Thrun Xaver, 2016

机译：通过扩展的双镶嵌方法实现多孔超低k材料集成：CMP之前/之后的固化比较

Low-k Etch/Ash for Copper Dual Damascene

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