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首页> 外文会议>Conference on Challenges in Process Integration and Device Technology 18-19 September 2000 Santa Clara, USA >Increasing Degree of Homogeneity of Electrical Parameters of Neutron-Transmuted Silicon
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Increasing Degree of Homogeneity of Electrical Parameters of Neutron-Transmuted Silicon

机译：中子转化硅的电参数均一度提高

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摘要

In order to increase the radial homogeneity of resistivity and life-time of minority carriers of monocrystalline silicon doped by neutron-transmutation it is suggested and approach based on the accounting of geometric size of samples and conditions of post-irradiation thermal processing. The studies have shown that reduction of thickness of wafers leads to improvement of homogeneity, and that life-time of minority carriers strongly depends on the cooling rate, increasing with decrease of this rate. Here the surface of silicon wafers with mechanical imperfections act as efficient gutters for recombination-active centers, where thermally stimulated diffusion of defects from the bulk to the surface plays crucial role, requiring longer thermal processing for thicker wafers.
机译：为了提高中子转化掺杂单晶硅的少数载流子的电阻率的径向均匀性和寿命，提出了一种基于样品几何尺寸和辐照后热处理条件的方法。研究表明，减小晶片厚度可提高均匀性，少数载流子的寿命在很大程度上取决于冷却速度，冷却速度随冷却速度的增加而增加。在这里，具有机械缺陷的硅晶片表面可充当复合活性中心的有效沟槽，在该中心，热激发的缺陷从块体到表面的扩散起着至关重要的作用，对于较厚的晶片，需要更长的热处理时间。

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