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首页> 外文会议>Conference on Emerging Lithographic Technologies VIII pt.2; 20040224-20040226; Santa Clara,CA; US >Collimated laser-Plasma Lithography (CPL) for 90nm and smaller contacts and vias
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Collimated laser-Plasma Lithography (CPL) for 90nm and smaller contacts and vias

机译：准直激光等离子光刻（CPL）适用于90nm及更小的触点和过孔

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摘要

Collimated laser-Plasma Lithography (CPL) offers potential to match Next Generation Lithography (NGL) needs, ending a pursuit of ever-larger lens NA and ever-smaller k1 process resolution factor. Powered by a laser-produced plasma (LPP) source at 1 nm, it capitalizes on mature development of x-ray lithography, which is the only NGL that has produced working chips. JMAR is upgrading its CPL system to increase overall throughput (system power) and is focusing on solving a known industry problem for which CPL presents an advantage: printing sub-90nm contacts in memory chips. The paper will discuss CPL system characteristics and performance. Supporting information on the upgrades to the laser and x-ray generator will be included. Specific resists and mask techniques and the roadmap leading to multi-generational support capability down to the 45nm node will be described.
机译：准直激光等离子光刻（CPL）提供了满足下一代光刻（NGL）需求的潜力，从而结束了对越来越大的透镜NA和越来越小的k1工艺分辨率因子的追求。它由1 nm的激光产生等离子体（LPP）源提供动力，利用了X射线光刻技术的成熟发展，这是NGL唯一生产工作芯片的技术。 JMAR正在升级其CPL系统以提高整体吞吐量（系统功率），并专注于解决CPL具有优势的已知行业问题：在存储芯片中打印90nm以下触点。本文将讨论CPL系统的特性和性能。将包括有关激光和X射线发生器升级的支持信息。将描述特定的抗蚀剂和掩模技术，以及导致多代支持能力下降到45nm节点的路线图。

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