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首页> 外文会议>Conference on MOEMS Display and Imaging Systems, Jan 28-29, 2003, San Jose, California, USA >High Resolution Maskless Lithography by the Integration of Microoptics and Point Array Technique
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High Resolution Maskless Lithography by the Integration of Microoptics and Point Array Technique

机译：集成微光学和点阵技术的高分辨率无掩模光刻

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An innovative High Resolution Maskless Lithography System (Hi-Res MLS) was designed using Texas Instruments' SVGA DMD, which employs additional micro-optics with a combination of low and high NA projection lens systems. A low power mercury-arc lamp filtered for G-line (λ = 435.8 nm) was used as the light source. Exposure experiments were performed using Ball patented Point Array scrolling or scanning method and proprietary data conversion, extraction and transfer software algorithms. In each scan, the field-width (W) was approximately 8.47 mm with the field-length (longitudinal field) only limited by memory capacity. DMD frame rates of up to 5 kHz (kframe/s) were achievable, which were synchronized to the stage motion. In this experiment, TSMR-8970XB10 photo-resist, diluted to 3.8 cP with PR thinner was employed. The photo-resist was spin-coated on a glass substrate to 1.0-μm thickness with 0.1-μm uniformity. A 0.4-μm step-size was used and 27000 DLP frames were extracted and transferred to the DMD driver. Results indicated consistent 1.8 μm L/S resolved across the entire field-width of 8.47 mm. At certain locales, 1.5-μm L/S was also resolved. The potential of this maskless lithography system is substantial. Even at the current level of performance, the system is sufficient for applications in MEMS, MOEMS, photomasking, high resolution LCD, high density PCB, etc. Higher productivity is predicted by lens system designed for H-line (λ = 405 nm), by using Ball's violet diode laser systems, and the development of real-time driver.
机译：使用德州仪器（TI）的SVGA DMD设计了一种创新的高分辨率无掩模光刻系统（Hi-Res MLS），该系统采用了附加的微光学器件，并结合了低和高NA投影透镜系统。使用低功率汞弧灯过滤G线（λ= 435.8 nm）作为光源。使用Ball获得专利的点阵列滚动或扫描方法以及专有的数据转换，提取和传输软件算法进行曝光实验。在每次扫描中，场宽（W）约为8.47 mm，而场长（纵向场）仅受存储容量限制。可以实现高达5 kHz（kframe / s）的DMD帧速率，该速率与舞台运动同步。在该实验中，使用了用PR稀释剂稀释到3.8 cP的TSMR-8970XB10光致抗蚀剂。将光致抗蚀剂以0.1μm的均匀性旋涂在玻璃基板上至1.0μm的厚度。使用0.4微米的步长，并提取了27000个DLP帧并将其传输到DMD驱动器。结果表明，在整个8.47 mm的场宽上均能获得稳定的1.8μmL / S。在某些区域，还解决了1.5μm的L / S。这种无掩模光刻系统的潜力是巨大的。即使在目前的性能水平下，该系统也足以用于MEMS，MOEMS，光掩模，高分辨率LCD，高密度PCB等领域。通过设计用于H线（λ= 405 nm）的透镜系统，可以预测更高的生产率，通过使用Ball的紫光二极管激光系统，并开发了实时驱动器。

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