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首页> 外文会议>Conference on Noise in Devices and Circuits Jun 2-4, 2003 Santa Fe, New Mexico, USA >High-frequency noise in FDSOI MOSFETs: a Monte Carlo investigation
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High-frequency noise in FDSOI MOSFETs: a Monte Carlo investigation

机译：FDSOI MOSFET中的高频噪声：蒙特卡洛研究

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摘要

In this work, we study the static, dynamic and noise characteristics of FDSOI MOSFET's by means of numerical simulations validated by comparison with experimental data. For this purpose, we use a 2D Ensemble Monte Carlo simulator, taking into account, in an appropriate manner, the physical topology of a fabricated 0.25 μm gate-length FDSOI transistor. Important effects appearing in real transistors, such as surface charges, contact resistances, impact ionization phenomena and extrinsic parasitics are included in the simulation. This allows to accurately reproduce the experimental behavior of static and dynamic parameters (output and transference characteristics, g_m/I_D ratio, capacitances, etc.). Moreover, due to the characteristics of our microscopic approach, results are explained by means of internal quantities such as concentration, velocity or energy of carriers. The results of the Monte Carlo simulations for the typical four noise parameters (NF_(min), R_m phase and module of (opt)) of the 0.25 μm FDSOI MOSFET also show an exceptional agreement with experimental data. Once the reliability of the simulator has been confirmed, a full study of the noise characteristics of the device (intrinsic noise sources, normalized α,β and C parameters, experimental noise figures of merit) is performed. Taking advantage of the possibilities of the Monte Carlo method as a pseudo-experimental approach, the influence on these noise characteristics of the variation of some geometry parameters (downscaling the gate length and thickness of the active layer) is evaluated an interpreted in terms of microscopic transport processes.
机译：在这项工作中，我们通过与实验数据进行比较验证的数值模拟研究FDSOI MOSFET的静态，动态和噪声特性。为此，我们以适当的方式使用2D Ensemble蒙特卡洛仿真器，并考虑到制造的0.25μm栅长FDSOI晶体管的物理拓扑。仿真中包括了在真实晶体管中出现的重要影响，例如表面电荷，接触电阻，碰撞电离现象和非本征寄生效应。这样可以准确地重现静态和动态参数（输出和传输特性，g_m / I_D比，电容等）的实验行为。此外，由于我们的微观方法的特点，结果通过内部量如载流子的浓度，速度或能量来解释。 0.25μmFDSOI MOSFET的典型四个噪声参数（NF_（最小），R_m相位和（opt）的模数）的蒙特卡罗模拟结果也显示出与实验数据的出色一致性。一旦确认了模拟器的可靠性，就可以对设备的噪声特性（固有噪声源，标准化的α，β和C参数，实验噪声系数）进行全面研究。利用蒙特卡洛方法作为伪实验方法的可能性，评估了某些几何参数变化对这些噪声特性的影响（缩小了有源层的栅极长度和厚度），并从微观角度进行了解释。运输过程。

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