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首页> 外文会议>Conference on Optical Microlithography XV Pt.2, Mar 5-8, 2002, Santa Clara, USA >0.33k1 ArF Lithography for 100nm DRAM
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0.33k1 ArF Lithography for 100nm DRAM

机译：用于100nm DRAM的0.33k1 ArF光刻

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摘要

We have evaluated 0.33kl ArF lithography using 0.63NA scanner to develop 100nm DRAM. ArF resist problems were resist pattern shrinkage during CD SEM measurement, resist pattern collapse during wet development and poor etch resistance. Off-Site Measurement(OSM) method has been developed for decreasing pattern shrinkage. With OSM method, 8nm of CD shrinkage was down to 2nm for 100nm L/S patterns. We have found a proper BARC material that prevents resist patterns falling down. Lack of etch resistance was compensated by hard mask. With W/SiN hard mask, acrylate-type resist patterns were transferred well into W/poly-Si gate patterns. We have simulated process window of critical DRAM cell patterns (isolation, gate, bit line contact, storage node) in the simple off-axis illurnination(OAI) and optical proximity correction(OPC) conditions based on single exposure. Simulation results were verified by lithography tests and it turned out that 0.33kl process was possible with exposure latitude of above 10% and focus latitude of more than 0.4um. 0.33kl ArF lithography was successfully implemented into 100nm DRAM with CD uniformity of 10nm(3σ) and overlay accuracy of 30nm(mean+3σ). We have also evaluated double exposure technique using dipole illumination targeting 90nm in order to see the possibility of 0.29kl process. 0.29kl process was also likely to be possible, although some specific improvements were recommended for the wider process window. From the simulation and resist patterning results, we believe that 0.85NA lens will be able to extend ArF lithography into 75nm by single exposure technology using crosspole illumination (0.33kl process) and 65nm by double exposure technology using dipole and crosspole illumination (0.29kl process).
机译：我们已经使用0.63NA扫描仪评估了0.33kl ArF光刻技术，以开发100nm DRAM。 ArF抗蚀剂问题包括CD SEM测量期间的抗蚀剂图案收缩，湿显影期间的抗蚀剂图案塌陷和较差的抗蚀刻性。已经开发了场外测量（OSM）方法来减少图案收缩。使用OSM方法，对于100nm L / S图案，CD的收缩率从8nm降至2nm。我们已经找到合适的BARC材料来防止抗蚀剂图案掉落。通过硬掩模补偿了抗蚀刻性的不足。使用W / SiN硬掩模，丙烯酸酯型抗蚀剂图案可以很好地转移到W / poly-Si栅极图案中。我们在简单的离轴照度（OAI）和基于单次曝光的光学邻近校正（OPC）条件下，模拟了关键DRAM单元图案（隔离，栅极，位线接触，存储节点）的处理窗口。通过光刻测试验证了仿真结果，结果表明，曝光范围大于10％，聚焦范围大于0.4um时，可以进行0.33kl的工艺。 0.33kl ArF光刻技术成功应用于100nm DRAM中，CD均匀性为10nm（3σ），覆盖精度为30nm（平均+3σ）。我们还评估了使用针对90nm偶极子照明的双曝光技术，以了解0.29kl工艺的可能性。 0.29kl的工艺也有可能实现，尽管建议对更大的工艺范围进行一些特定的改进。从仿真和抗蚀剂图案化结果来看，我们相信0.85NA透镜将能够通过使用交叉极照明（0.33kl工艺）的单曝光技术将ArF光刻技术扩展到75nm，并通过使用偶极和交叉极照明（0.29kl工艺）的双曝光技术将ArF光刻技术扩展到75nm ）。

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