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首页> 外文会议>Conference on Optical Microlithography XV Pt.2, Mar 5-8, 2002, Santa Clara, USA >Defect Printability of Alternative Phase-Shift Mask: A Critical Comparison of Simulation and Experiment
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Defect Printability of Alternative Phase-Shift Mask: A Critical Comparison of Simulation and Experiment

机译：替代相移掩模的缺陷可印刷性：仿真和实验的关键比较

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摘要

An alternative phase shift mask (alt-PSM) is a promising device for extending optical lithography to finer design rules. There have been few reports, however, on the mask's ability to identify phase defects. We report here an alt-PSM of a dual-trench type for KrF exposure, with programmed quartz defects used to evaluate defect printability by measuring aerial images with a Zeiss MSM100 measuring system. The experimental results are simulated using the TEMPEST program. First, a critical comparison of the simulation and the experiment is conducted. The actual measured topography of quartz defects are used in the simulation. Moreover, a general simulation study on defect printability using an alt-PSM for ArF exposure is conducted. The defect dimensions, which produce critical CD errors are determined by simulation that takes into account the full 3-dimensional structure of phase defects as well as a simplified structure. The critical dimensions of an isolated defect identified by the alt-PSM of a single-trench type for ArF exposure are 240 nm in bottom diameter and 50 degrees in height (phase) for the cylindrical shape and 240 nm in bottom diameter and 90 degrees in height (phase) for the rotating trapezoidal shape, where the CD error limit is +-5%.
机译：另一种相移掩模（alt-PSM）是一种很有前途的设备，可将光刻技术扩展到更精细的设计规则。但是，关于掩膜识别相缺陷的能力的报道很少。我们在此报告了一种用于KrF曝光的双沟槽式alt-PSM，其编程的石英缺陷用于通过使用Zeiss MSM100测量系统测量航空图像来评估缺陷的可印刷性。使用TEMPEST程序模拟了实验结果。首先，进行了仿真和实验的严格比较。仿真中使用了实际测量的石英缺陷形貌。此外，进行了使用alt-PSM进行ArF曝光的缺陷可印刷性的一般模拟研究。产生严重CD错误的缺陷尺寸是通过模拟确定的，该模拟考虑了相位缺陷的完整3维结构以及简化的结构。对于ArF暴露，通过单沟槽类型的alt-PSM识别的孤立缺陷的临界尺寸为：圆柱形状的底部直径为240 nm，圆柱形的高度（相位）为50度，底部直径为240 nm，高度为90度。旋转梯形形状的高度（相位），其中CD误差极限为+ -5％。

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