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首页> 外文会议>Conference on Quantum Dots, Nanoparticles, and Nanoclusters; 20040126-20040127; San Jose,CA; US >InGaAs quantum dot structures grown in GaAs barrier by metal organic chemical vapor deposition for high efficient long wavelength emission
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InGaAs quantum dot structures grown in GaAs barrier by metal organic chemical vapor deposition for high efficient long wavelength emission

机译：通过金属有机化学气相沉积在GaAs阻挡层中生长的InGaAs量子点结构，可实现高效的长波长发射

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摘要

In this work we present a method to obtain room temperature ground state emission beyond 1.3 μm from InGaAs QDs, grown by MOCVD, embedded directly into a binary GaAs matrix. The wavelength is tuned from 1.26μm up to 1.33 μm by varying the Ⅴ/Ⅲ ratio during the growth of the GaAs cap layer, without using seeding layer or InGaAs wells. A line-shape narrowing (from 36 meV to 24 meV) and a strong reduction of the temperature dependent quenching of the emission (down to a factor 3 from 10K to 300K) are observed, that represent the best value reported for QD structures emitting at 1.3 μm. The results are explained in term different morphological evolution and surface reconstruction undergone by the InGaAs islands during the GaAs overgrowth that result in larger QD size and in lower In-Ga intermixing. Indeed, cross sectional TEM images show an increase in the QD size of more than 30% with decreasing the AsH3 flow. The overall strain reduction due to the use of the GaAs matrix allows the fabrication of highly efficient staked QD layers. The single and multiple QDs samples show a systematic increase of the emission intensity and similar spectral shape.
机译：在这项工作中，我们提出了一种方法，该方法可从通过MOCVD生长的InGaAs量子点获得直接嵌入二元GaAs矩阵中的室温基态发射超过1.3μm。在不使用晶种层或InGaAs阱的情况下，通过在GaAs盖层的生长过程中改变Ⅴ/Ⅲ比，可将波长从1.26μm调节到1.33μm。观察到线形变窄（从36 meV到24 meV）和发射的温度依赖性猝灭的强烈降低（从10K到300K降低到3倍），代表了报告的QD结构的最佳值。 1.3微米用GaAs过度生长期间InGaAs岛经历的不同形态演变和表面重建来解释结果，这会导致较大的QD尺寸和较低的In-Ga混合。实际上，横截面TEM图像显示，随着AsH3流量的减少，QD尺寸增加了30％以上。由于使用了GaAs基体，整体应变降低了，从而可以制造出高效率的浇铸QD层。单个和多个QD样品显示出发射强度的系统增加和相似的光谱形状。

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