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首页> 外文会议>Society of Photo-Optical Instrumentation Engineers Conference on Quantum Dots, Nanoparticles, and Nanoclusters >InGaAs quantum dot structures grown in GaAs barrier by metal organic chemical vapor deposition for high efficient long wavelength emission
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InGaAs quantum dot structures grown in GaAs barrier by metal organic chemical vapor deposition for high efficient long wavelength emission

机译：通过金属有机化学气相沉积在GaAs屏障中生长的Ingaas量子点结构，用于高效的长波长发射

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In this work we present a method to obtain room temperature ground state emission beyond 1.3 μm from InGaAs QDs, grown by MOCVD, embedded directly into a binary GaAs matrix. The wavelength is tuned from 1.26μm up to 1.33 μm by varying the Ⅴ/Ⅲ ratio during the growth of the GaAs cap layer, without using seeding layer or InGaAs wells. A line-shape narrowing (from 36 meV to 24 meV) and a strong reduction of the temperature dependent quenching of the emission (down to a factor 3 from 10K to 300K) are observed, that represent the best value reported for QD structures emitting at 1.3 μm. The results are explained in term different morphological evolution and surface reconstruction undergone by the InGaAs islands during the GaAs overgrowth that result in larger QD size and in lower In-Ga intermixing. Indeed, cross sectional TEM images show an increase in the QD size of more than 30% with decreasing the AsH3 flow. The overall strain reduction due to the use of the GaAs matrix allows the fabrication of highly efficient staked QD layers. The single and multiple QDs samples show a systematic increase of the emission intensity and similar spectral shape.
机译：在这项工作中，我们提出了一种方法来从InGaAs QDS获得超过1.3μm的室温接地状态发射，由MOCVD生长，直接嵌入到二元GaAs矩阵中。通过改变GaAs盖层的生长期间的ⅴ/Ⅲ比，在GaAs盖层的生长期间，波长从1.26μm调谐，而不使用播种层或ingaas孔。观察到线状缩小（从36mEV到24 meV）和发射的温度依赖性淬火的强度减小（从10K至300k到300k），表示QD结构发出的最佳值1.3μm。在GaAs过度生长期间，InGaAs群岛在GaAs过度生长期间通过InGaAs岛进行了不同的形态学演变和表面重建的结果解释了，导致QD尺寸较大，并且在较低的内部混合中。实际上，随着灰烬3流动，横截面TEM图像显示QD尺寸的增加超过30％。由于GaAs基质的使用引起的整体应变降低允许制造高效的堆积QD层。单个和多个QDS样品显示出发射强度和相似的光谱形状的系统增加。

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