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首页> 外文会议>Device packaging 2010 >Novel Polymeric Protective Coatings for Hydrofluoric Acid Vapor Etching During MEMS Release Etch
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Novel Polymeric Protective Coatings for Hydrofluoric Acid Vapor Etching During MEMS Release Etch

机译：MEMS释放刻蚀过程中用于氢氟酸蒸气刻蚀的新型聚合物保护涂层

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MEMS release etching of a sacrificial oxide layer plays an important role in fabricating movingrnparts in MEMS devices. Traditionally, wet chemistries have been used in order to achieve release etching,rnbut their use can create surface tension issues that can cause the MEMS microstructures to stick together. Itrnhas been demonstrated that using hydrofluoric acid (HF) vapor release etching can efficiently circumventrnthe stiction phenomenon because it substantially eliminates surface tension. Inorganic-based films such asrnsilicon nitride, alumina, SiC, polysilicon, etc., have been used as masking materials that are resistant tornvapor HF. These materials require very-high-temperature vacuum deposition techniques that are oftenrnlengthy, complicated, and costly. This paper presents novel spin-on polymeric HF-resistant blanket coatingrnmaterials that protect silicon oxide or metals against HF attack during HF vapor etching. These newlyrndeveloped polymeric coatings can be processed at lower temperatures (< 250oC) and are applied as thinrnfilms (10-15 μm) for extended HF vapor etching periods (longer than 1 hour). Hence, these HF vapor–rnresistant materials will enable the MEMS industry to significantly lower the cost of manufacturing MEMSrndevices and will significantly simplify the manufacturing process as well.
机译：MEMS释放牺牲氧化物层的蚀刻在制造MEMS器件中的运动部件中起着重要作用。传统上，已经使用湿化学来实现释放蚀刻，但是湿化学的使用会产生表面张力问题，从而导致MEMS微结构粘在一起。已经证明使用氢氟酸（HF）蒸气释放蚀刻可以有效地规避粘滞现象，因为它基本上消除了表面张力。诸如氮化硅，氧化铝，SiC，多晶硅等的基于无机的膜已经被用作抵抗耐HF蒸发的掩模材料。这些材料需要非常长的，复杂的和昂贵的非常高温的真空沉积技术。本文提出了一种新型的旋涂式聚合物耐HF毯式涂料，可保护氧化硅或金属免受HF蒸气蚀刻过程中的HF侵蚀。这些新开发的聚合物涂层可以在较低的温度下（<250oC）进行处理，并作为薄膜（10-15μm）进行涂覆，以延长HF蒸气蚀刻时间（超过1小时）。因此，这些耐HF蒸汽的材料将使MEMS工业大大降低制造MEMSrn器件的成本，并且还将大大简化制造过程。

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