High Dose Implantation Impact on the Carrier Mobility in Ultra-Thin Unstrained and Strained SOI Films

机译：大剂量植入对超薄无应变和应变SOI薄膜载流子迁移的影响

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Based on electrical measurements and transmission election microscopy imaging we propose in this paper a possible explanation for the measured mobility degradation with gate length reduction in short-channel MOSFETs. The carrier mobility in end-of-range implantation regions was investigated in Silicon-On-Insulator (SOI) and tensily-strained Silicon-On-Insulator (sSOI) substrates. Wafers with ultrathin films (from 8 to 35 nm) were Ge implanted at various concentrations, then annealed. The Pseudo-MOSFET measurements showed a mobility decrease (from 5 to 34%) as the implantation dose increased. The results are relevant for the optimization of the sources and drains regions of advanced nano-scale SOI transistors.

机译：基于电学测量和透射电子显微镜成像，我们在本文中提出了一种可能的解释，即随着短沟道MOSFET栅极长度的减小，迁移率降低。在绝缘体上硅（SOI）和受拉应变的绝缘体上硅（sSOI）衬底中研究了射程结束注入区域中的载流子迁移率。将具有不同浓度的Ge薄膜（8至35 nm）注入，然后进行退火。伪MOSFET的测量结果表明，随着注入剂量的增加，迁移率降低（从5％降至34％）。结果与优化先进的纳米级SOI晶体管的源极和漏极区域有关。

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《Electrochemical Society(ECS) Meeting;International Symposium on Silicon-on-Insulator Technology and Devices; 20070506-11;20070506-11; Chicago,IL(US);Chicago,IL(US)》|2007年|P.3338|共2页
会议地点 ChicagoIL(US);ChicagoIL(US)
作者
C. Dupre; P. F. Fazzini; T. Ernst; F. Cristiano; J.-M. Hartmann; A. Claverie; F. Andrieu; O. Faynot; P. Rivallin; F. Laugier; G. Ghibaudo; S. Cristoloveanu; S. Deleonibus;
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CEA-LETI, Minatec 17 Avenue des Martyrs, 38054 Grenoble Cedex 9, France;

IMEP-ENSERG, Minatec 3 Parvis Louis Neel BP 257, 38016 Grenoble, France;

CEMES-CNRS 29, Rue Jeanne Marvig, 31055 Toulouse Cedex 4 France;

LAAS-CNRS 7 Avenue du Colonel Roche - 31077 To;

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1. Carrier mobility degradation due to high dose implantation in ultrathin unstrained and strained silicon-on-insulator films [J] . C. Dupre, T. Ernst, J.-M. Hartmann, Journal of Applied Physics . 2007,第10期

机译：由于高剂量注入超薄未应变和应变绝缘体上硅膜，导致载流子迁移率下降
2. Spin-state transition in unstrained & strained ultra-thin BiCoO3 films [J] . Das Tilak, Saha-Dasgupta Tanusri Dalton transactions: An international journal of inorganic chemistry . 2015,第23期

机译：无应变和应变的超薄BiCoO3薄膜的自旋态跃迁
3. Study of carrier transport in strained and unstrained SOI tri-gate and omega-gate silicon nanowire MOSFETs [J] . M. Koyama, M. Casse, R. Coquand, Solid-State Electronics . 2013,第juna期

机译：应变和非应变SOI三栅极和Ω栅极硅纳米线MOSFET中载流子传输的研究
4. High Dose Implantation Impact on the Carrier Mobility in Ultra-Thin Unstrained and Strained SOI Films [C] . C. Dupre, P. F. Fazzini, T. Ernst, Electrochemical Society Meeting . 2007

机译：高剂量植入对超薄未经训练和紧张的SOI膜中载流子迁移率的影响
5. High-speed thin-film transistors on single-crystalline, unstrained- and strained-silicon-based nanomembranes. [D] . Yuan, Hao-Chih. 2007

机译：基于单晶，无应变和应变硅的纳米膜上的高速薄膜晶体管。
6. High charge-carrier mobility enables exploitation of carrier multiplication in quantum-dot films [O] . C. S. Suchand Sandeep, Sybren ten Cate, Juleon M. Schins, -1

机译：高电荷载流子迁移率可利用量子点薄膜中的载流子倍增
7. Hall effect measurements on strained and unstrained thin films of La0.7Ca0.3MnO3 and La0.7Sr0.3MnO3 [O] . Dildar J.M., Beekman C., He X., 2012

机译：La0.7Ca0.3MnO3和La0.7Sr0.3MnO3的应变薄膜和非应变薄膜的霍尔效应测量

High Dose Implantation Impact on the Carrier Mobility in Ultra-Thin Unstrained and Strained SOI Films

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