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首页> 外文会议>Electrochemical Society(ECS) Meeting;International Symposium on Silicon-on-Insulator Technology and Devices; 20070506-11;20070506-11; Chicago,IL(US);Chicago,IL(US) >Epitaxial Regrowth of Ge on SGOI and GeOI Substrates Obtained by Ge Condensation
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Epitaxial Regrowth of Ge on SGOI and GeOI Substrates Obtained by Ge Condensation

机译：Ge凝结获得的SGOI和GeOI衬底上Ge的外延生长

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摘要

In this paper, we have investigated the influence of process parameters (bake temperature, bake duration and growth temperature) on the morphology of GeOI substrate thickened by Ge epitaxial regrowth. We have seen that the optimum bake temperature in terms of layer roughness and interfacial contamination is 600℃. For higher bake temperatures, the layer morphology is 3D due to a layer dewetting. The efficiency of the surface preparation prior to the epitaxial regrowth has been assessed by Angle resolved X-Ray Photoelectrons Spectroscopy. No residual oxygen contamination has been detected. Furthermore, we have investigated the influence of the growth temperature on the layer morphology and resistivity. For temperatures higher than 450℃, some thermal grooving assisted by the crystal defects (cross hatch) occurred and 3D Ge layers were obtained. Finally, GeOI substrates thickened with the best growth condition were evaluated by Pseudo MOSFET technique. An exceptional high hole mobility, beyond 400 cm~2/V.s was observed.
机译：在本文中，我们研究了工艺参数（烘烤温度，烘烤持续时间和生长温度）对Ge外延再生长的GeOI衬底形貌的影响。我们已经看到，就层粗糙度和界面污染而言，最佳烘烤温度为600℃。对于较高的烘烤温度，由于层脱湿，层形态为3D。通过角度分辨X射线光电子能谱评估了外延再生之前表面制备的效率。没有检测到残留的氧气污染。此外，我们研究了生长温度对层形貌和电阻率的影响。在高于450℃的温度下，由于晶体缺陷（交叉影线）而发生了一些热切开槽，并获得了3D Ge层。最后，采用伪MOSFET技术对具有最佳生长条件增厚的GeOI衬底进行了评估。观察到异常的高空穴迁移率，超过400cm 2 /V.s。

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