Cell-by-Cell SCR ESD Protection Structures in 28nm CMOS

著录项

• 来源
  《2019 Electron Devices Technology and Manufacturing Conference》|2019年|327-329|共3页
• 会议地点 Singapore(SG)
• 作者

  Feilong Zhang; Cheng Li; Chenkun Wang; Mengfu Di; Qi Chen; Han Wang; Haijun Zhao; Albert Wang;

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• 作者单位

  Department of Electrical and Computer Engineering, University of California, Riverside, USA;

  Department of Electrical and Computer Engineering, University of California, Riverside, USA;

  Department of Electrical and Computer Engineering, University of California, Riverside, USA;

  Department of Electrical and Computer Engineering, University of California, Riverside, USA;

  Department of Electrical and Computer Engineering, University of California, Riverside, USA;

  Department of Electrical and Computer Engineering, University of California, Riverside, USA;

  SMIC, China;

  Department of Electrical and Computer Engineering, University of California, Riverside, USA;

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• 会议组织
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  Electrostatic discharges; Layout; Integrated circuits; Rectifiers; Robustness; Foundries; Electron devices;

  机译：静电放电;布局;集成电路;整流器;坚固性;铸造厂;电子设备;;