首页> 外文会议>2019 Electron Devices Technology and Manufacturing Conference >Fabrication of MoS2(1-x)Te2x via Sulfurization using (t-C4H9)2S2 and its Physical Structure Evaluation
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Fabrication of MoS2(1-x)Te2x via Sulfurization using (t-C4H9)2S2 and its Physical Structure Evaluation

机译:使用(tC 4 H 9 2(1-x) Te 2x > 2 S 2 及其物理结构评价

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Recently, layered material, especially transition metal dichalcogenides (TMDs) are attracting growing attention due to its unique physical properties and wide possibility in applications. In this study, the fabrication of a TMD alloy, MoS2(1-x)Te2x is discussed and its physical structure is evaluated. It was shown that MoS2(1-x)Te2x can be fabricated with sulfurization of MoSxTey (x+y<;2.0) prepared by co-sputtering. Raman spectroscopy and X-ray photoelectron spectroscopy results confirm the formation of the alloy. Further investigation with X-ray diffraction shows that fabrication condition must be carefully selected in order to prevent phase segregation. Fabrication of the alloy is expected to broaden the application of TMD in optoelectronics field.
机译:近来,层状材料,特别是过渡金属二卤化金属(TMD),由于其独特的物理性能和广泛的应用前景而引起了越来越多的关注。在这项研究中,制造了TMD合金MoS \ n 2(1-x) \ nTe \ n 2x \ n并评估了其物理结构。结果表明MoS \ n 2(1-x) \ nTe \ n 2x \ n \ n x \ nTe \ n y \ n(x + y <; 2.0)通过共同溅射。拉曼光谱和X射线光电子能谱结果证实了合金的形成。 X射线衍射的进一步研究表明,必须仔细选择制造条件,以防止相分离。合金的制造有望拓宽TMD在光电领域的应用。

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