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Fabrication of MoS2(1-x)Te2x via Sulfurization using (t-C4H9)2S2 and its Physical Structure Evaluation

机译:MOS 2(1-X) TE 2x 通过硫化(TC 4 H 9 2 S 2 及其物理结构评估

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Recently, layered material, especially transition metal dichalcogenides (TMDs) are attracting growing attention due to its unique physical properties and wide possibility in applications. In this study, the fabrication of a TMD alloy, MoS2(1-x)Te2x is discussed and its physical structure is evaluated. It was shown that MoS2(1-x)Te2x can be fabricated with sulfurization of MoSxTey (x+y<;2.0) prepared by co-sputtering. Raman spectroscopy and X-ray photoelectron spectroscopy results confirm the formation of the alloy. Further investigation with X-ray diffraction shows that fabrication condition must be carefully selected in order to prevent phase segregation. Fabrication of the alloy is expected to broaden the application of TMD in optoelectronics field.
机译:最近,由于其独特的物理性质和应用中的广泛可能性,层状材料,尤其是过渡金属二甲基甲基生成剂(TMDS)正在引起不断的关注。在这项研究中,制造了TMD合金,MOS 2(1-x)< / sub>te. 2x 讨论并评估其物理结构。它显示出mos 2(1-x)< / sub>te. 2x 可以用mos的硫化制造 x te. y (x + y <; 2.0)通过共溅射制备。拉曼光谱和X射线光电子能谱结果证实了合金的形成。通过X射线衍射进一步研究表明,必须仔细选择制造条件以防止相位偏析。预计合金的制造将拓宽TMD在光电子场中的应用。

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