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首页> 外文会议>European Photovoltaic Solar Energy Conference; 20060904-08; Dresden(DE) >KEY ISSUES FOR THE IMPROVEMENT OF THE INTERFACE AND EMITTER QUALITY IN a-Si-:H/c-Si HETEROJUNCTION SOLAR CELLS
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KEY ISSUES FOR THE IMPROVEMENT OF THE INTERFACE AND EMITTER QUALITY IN a-Si-:H/c-Si HETEROJUNCTION SOLAR CELLS

机译：改进a-Si-：H / c-Si异质结太阳能电池的界面和发射极质量的关键问题

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摘要

The development of a cheaper, medium-thick polycrystalline ribbon silicon or similar material grown on glassily or other low cost substrates is an important topic of photovoltaic R&D to overcame the shortage of the Si feedstock is becoming a serious problem limiting further growth of PV market. The predicted materials impose low temperature approach for the surface passivation-conditioning and amorphous-crystalline silicon heterojunctions (SHJ) could be the solution. A necessary step toward further application of SHJ to the new class of materials is a better knowledge of the a-Si/c-Si interface structural, morphological and electrical modifications occurring during the various steps of the SHJ preparation. These steps include the c-Si substrate conditioning (wet and dry cleaning), the kinetics of SiH_4-H_2 based plasma ignition and the interaction with hydrogen-based species (H-atoms, Si-H, Si-H_2, Si-H_3 radicals) impinging and diffusing into the c-Si substrate. This contribution discusses the impact of the c-Si surface treatments on its interaction with hydrogen and on the interface and emitter quality in a-Si:H/c-Si heterojunction solar cells.
机译：在玻璃或其他低成本基板上生长便宜，中等厚度的多晶硅带状硅或类似材料的开发是光伏研发的重要课题，克服硅原料的短缺正成为限制光伏市场进一步增长的严重问题。预测的材料对表面钝化条件施加了低温方法，而非晶晶体硅异质结（SHJ）可能是解决方案。进一步将SHJ应用于新型材料的必要步骤是更好地了解SHJ制备各个步骤中发生的a-Si / c-Si界面结构，形态和电学修饰。这些步骤包括c-Si基板处理（湿法和干洗），基于SiH_4-H_2的等离子体点火的动力学以及与氢基物种（H原子，Si-H，Si-H_2，Si-H_3自由基）的相互作用。 ）撞击并扩散到c-Si衬底中。该贡献讨论了c-Si表面处理对其与氢的相互作用以及a-Si：H / c-Si异质结太阳能电池中界面和发射极质量的影响。

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