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首页> 外文会议>Ferroelectric Thin Films XII >Effect of Thermal Strain on Domain Fraction in a-/b-axis-oriented Epitaxial Bi_4Ti_3O_(12) Films
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Effect of Thermal Strain on Domain Fraction in a-/b-axis-oriented Epitaxial Bi_4Ti_3O_(12) Films

机译：热应变对a / b轴取向外延Bi_4Ti_3O_（12）薄膜中畴分数的影响

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摘要

a-/b-axis-oriented epitaxial Bi_4Ti_3O_(12) and neodymium-substituted Bi_4Ti_3O_(12) films with a different a-domain fraction, V_((100))/[V_((100))+V_((010))], were grown by metalorganic chemical vapor deposition above the phase transition temperature. It was demonstrated that the saturation polarization observed for the a-/b-axis-oriented film is proportional to the a-domain fraction estimated by x-ray diffraction. The liner relationship passing through the origin revealed that the 90° domain switching by an external electric field hardly occurred. The extrapolation gave spontaneous polarization of 58 μC/cm~2 for a pure a-axis-oriented (Bi_(3.5)Nd_(0.5))Ti_3O_(12) film. The domain fraction was investigated as a function of thermal strain originated from a difference in thermal expansion coefficient between the film and substrates. The domain fraction of the films changed with the thermal strain along the in-plane [010] in tetragonal a-axis-oriented films as well as epitaxially grown tetragonal Pb(Zr,Ti)O_3 films.
机译：a / b轴取向的外延Bi_4Ti_3O_（12）和钕取代的Bi_4Ti_3O_（12）膜具有不同的a畴分数V _（（100））/ [V _（（100））+ V _（（010） ）]，是在相变温度以上通过金属有机化学气相沉积法生长的。已经证明，对于a / b轴取向的膜观察到的饱和偏振与通过X射线衍射估计的a畴分数成比例。穿过原点的线性关系表明，几乎不会发生由外部电场引起的90°域切换。对于纯a轴取向的（Bi_（3.5）Nd_（0.5））Ti_3O_（12）膜，外推给出自发极化为58μC/ cm〜2。根据薄膜和基材之间的热膨胀系数差异，研究了畴分数随热应变变化的函数。在四方a轴取向的膜以及外延生长的四方Pb（Zr，Ti）O_3膜中，膜的畴分数随沿平面[010]的热应变而变化。

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