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首页> 外文会议>Fifth International Symposium on Semiconductor Wafer Bonding, 5th, Oct 1999, Honolulu >WAFER BONDING OF COMPOUND SEMICONDUCTORS USING ATOMIC HYDROGEN
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WAFER BONDING OF COMPOUND SEMICONDUCTORS USING ATOMIC HYDROGEN

机译：使用原子氢对复合半导体进行晶圆键合

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摘要

A method is demonstrated for large-area low-temperature wafer bonding of III-V compound semiconductors using thermally generated atomic hydrogen in an ultra-high vacuum (UHV). In this paper, GaAs and InP were used. No wet chemical cleaning was found necessary. In UHV, the wafer surfaces were cleaned using atomic hydrogen at 350-500℃, and bonded immediately after the cleaning or near room temperatures. Without the application of mechanical load, covalent bonding almost over the whole wafer area was obtained. Transmission electron microscopy (TEM) observation showed that the native surface oxide was completely removed and that an atomically abrupt interface had formed without any damage in the crystal. The fracture surface energy was found to be comparable to that of the bulk material. Using this method, bonding of dissimilar semiconductors at room temperature is possible.
机译：演示了一种在超高真空（UHV）中使用热产生的原子氢进行III-V化合物半导体大面积低温晶圆键合的方法。在本文中，使用了GaAs和InP。无需进行湿化学清洁。在UHV中，使用氢原子在350-500℃的温度下清洁晶片表面，并在清洁后或接近室温下立即粘合。在不施加机械负载的情况下，几乎在整个晶片区域上都获得了共价键。透射电子显微镜（TEM）观察表明，天然表面氧化物已被完全去除，并且形成了原子突变界面，晶体中没有任何损坏。发现断裂表面能与块状材料相当。使用这种方法，可以在室温下键合异种半导体。

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