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首页> 外文会议>Flexible Electronics 2004 -Materials and Device Technology >Excimer Laser Crystallization of Sputter Deposited a-Si Films on Flexible Substrates
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Excimer Laser Crystallization of Sputter Deposited a-Si Films on Flexible Substrates

机译：柔性衬底上溅射沉积非晶硅薄膜的准分子激光结晶

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In this report, excimer laser annealed polycrystalline silicon (poly-Si) films on flexible polymer substrates are investigated. The amorphous silicon (a-Si) films were first deposited on polycarbonate (PC) and polyethersulfone (PES) substrates by radio-frequency (RF) magnetron sputter and sequentially annealed by XeCl excimer laser annealing system (λ = 308 nm). The argon concentration of a-Si films which was estimated by Rutherford Backscattering Spectrometry (RBS) was found to be dependent on the dynamic pressure during the deposition process and the sputtering gas. Typically, the argon concentration of a-Si film was 1 ～ 2% when the film was deposited using argon gas at 6 mTorr. After the annealing process, the average grain size of the poly-Si film annealed with laser energy density of 289 mJ/cm~2 was 400 nm estimated from transmission electron microscope (TEM) investigations.
机译：在此报告中，研究了在柔性聚合物基板上的准分子激光退火多晶硅（poly-Si）膜。首先通过射频（RF）磁控溅射将非晶硅（a-Si）膜沉积在聚碳酸酯（PC）和聚醚砜（PES）基板上，然后通过XeCl准分子激光退火系统（λ= 308 nm）进行退火。发现通过Rutherford背散射光谱法（RBS）估算的a-Si膜的氩气浓度取决于沉积过程中的动态压力和溅射气体。通常，当使用6 mTorr的氩气沉积a-Si膜时，其氩气浓度为1〜2％。退火处理后，通过透射电子显微镜（TEM）研究估计，以289 mJ / cm〜2的激光能量密度退火的多晶硅膜的平均晶粒尺寸为400 nm。

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