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Active region dimensionality and quantum efficiencies of InGaN LEDs from temperature dependent photoluminescence transients

机译：随温度变化的光致发光瞬变，InGaN LED的有源区尺寸和量子效率

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摘要

Temperature dependent recombination dynamics in c-plane InGaN light emitting diodes (LEDs) with different well thicknesses, 1.5, 2, and 3 nm, were investigated to determine the active region dimensionality and its effect on the internal quantum efficiencies. It was confirmed for all LEDs that the photoluminescence (PL) transients are governed by radiative recombination at low temperatures while nonradiative recombination dominates at room temperature. At photoexcited carrier densities of 3 - 4.5 × 10~(16) cm~(-3), the room-temperature Shockley-Read-Hall (A) and the bimolecular (B) recombination coefficients (A, B) were deduced to be (9.2×10~7 s~(-1), 8.8×10~(-10) cm~3s~(-1)), (8.5×10~7 s~(-1), 6.6×10~(-10) cm~3s~(-1)), and (6.5×10~7 s~(-1), 1.4×10~(-10) cm~3s~(-1)) for the six period 1.5, 2, and 3 nm well-width LEDs, respectively. From the temperature dependence of the radiative lifetimes, τ_(rad) α T~(N/2), the dimensionality N of the active region was found to decrease consistently with decreasing well width. The 3 nm wide wells exhibited ～T~(1.5) dependence, suggesting a three-dimensional nature, whereas the 1.5 nm wells were confirmed to be two-dimensional (～T~1) and the 2 nm wells close to being two-dimensional. We demonstrate that a combination of temperature dependent PL and time-resolved PL techniques can be used to evaluate the dimensionality as well as the quantum efficiencies of the LED active regions for a better understanding of the relationship between active-region design and the efficiency limiting processes in InGaN LEDs.
机译：研究了具有不同阱厚度（1.5、2和3 nm）的c平面InGaN发光二极管（LED）中随温度变化的重组动力学，以确定有源区的尺寸及其对内部量子效率的影响。对于所有LED，已经确认，光致发光（PL）瞬变受低温下的辐射重组支配，而非辐射重组在室温下占主导地位。在3-4.5×10〜（16）cm〜（-3）的光激发载流子密度下，推导出室温的Shockley-Read-Hall（A）和双分子（B）的重组系数（A，B）为（9.2×10〜7 s〜（-1），8.8×10〜（-10）cm〜3s〜（-1）），（8.5×10〜7 s〜（-1），6.6×10〜（- 10）cm〜3s〜（-1））和六个周期1.5、2的（6.5×10〜7 s〜（-1），1.4×10〜（-10）cm〜3s〜（-1））和3 nm宽度的LED。根据辐射寿命的温度依赖性，τ_（rad）αT〜（N / 2），发现有源区的尺寸N随着阱宽度的减小而一致地减小。 3 nm宽的孔表现出〜T〜（1.5）依赖性，表明是三维性质，而1.5 nm的孔被确认为二维（〜T〜1），而2 nm的孔接近二维。 。我们证明，温度依赖的PL和时间分辨PL技术的组合可用于评估LED有源区的尺寸和量子效率，以更好地了解有源区设计与效率限制过程之间的关系在InGaN LED中。

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  • 来源
    《Gallium nitride materials and devices X》|2015年|93632U.1-93632U.10|共10页
  • 会议地点 San Francisco CA(US)
  • 作者

    Nuri Can; Serdal Okur; Morteza Monavarian; Fan Zhang; Vitaliy Avrutin; Hadis Morkoc; Ali Teke; UEmit OEzguer;

  • 作者单位

    Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, VA 23284, USA,Physics Department, Balikesir University, Balikesir, 10145, Turkey;

    Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, VA 23284, USA;

    Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, VA 23284, USA;

    Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, VA 23284, USA;

    Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, VA 23284, USA;

    Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, VA 23284, USA;

    Physics Department, Balikesir University, Balikesir, 10145, Turkey;

    Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, VA 23284, USA;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    InGaN; light emitting diodes; time-resolved photoluminescence; recombination dynamics; quantum efficiency;

    机译：氮化镓;发光二极管;时间分辨光致发光重组动力学；量子效率;

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