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首页> 外文会议>Gettering and defect engineering in semiconductor technology XIV >Analysis of electron-beam crystallized large grained Si films on glass substrate by EBIC, EBSD and PL
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Analysis of electron-beam crystallized large grained Si films on glass substrate by EBIC, EBSD and PL

机译：EBIC，EBSD和PL分析玻璃衬底上的电子束结晶大颗粒Si膜

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摘要

The properties of electron-beam crystallized, large-grained silicon layers of about 10 μm thickness on glass have been studied by combining EBIC, EBSD and photoluminescence. It is found that most grains are free of dislocations. From a detailed analysis based on the dependence of EBIC collection efficiency on beam energy we conclude that the recombination properties of the layers are mainly determined by the bulk diffusion length. The estimated bulk diffusion length in the dislocation-free layer regions is in the range of roughly 5-7 μm, depending on the recombination velocity assumed for the rear surface. In dislocated regions the diffusion length drops to 1 μm or less. Close to some twin boundaries, an unsusual improvement of the electrical layer properties has been observed. In addition, wave-like inhomogeneities of the layer properties have been established, resulting probably from instabilities during the crystallization process.
机译：通过结合EBIC，EBSD和光致发光，研究了玻璃上约10μm厚度的电子束结晶大晶粒硅层的特性。发现大多数晶粒没有位错。通过基于EBIC收集效率对束能量的依赖性进行的详细分析，我们得出结论，各层的复合性能主要取决于体扩散长度。在无位错层区域中的估计的本体扩散长度在大约5-7μm的范围内，这取决于为后表面假定的复合速度。在位错区域中，扩散长度降至1μm或更小。在一些孪生边界附近，已经观察到电层性能的异常改善。另外，已经确定了层性质的波状不均匀性，这可能是由于结晶过程中的不稳定性所致。

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  • 来源
  • 会议地点 Loipersdorf(AT);Loipersdorf(AT)
  • 作者

    W. Seifert; D. Amkreutz; T. Arguirov; M. Krause; M. Schmidt;

  • 作者单位

    IHP, Im Technologiepark 25, D-15236 Frankfurt (Oder), Germany,Joint Lab IHP/BTU, BTU Cottbus, Konrad-Wachsmann-Allee 1, D-03046 Cottbus, Germany,Helmholtz-Zentrum fuer Materialien und Energie, Kekulestr. 5, D-12489 Berlin, Germany;

    Helmholtz-Zentrum fuer Materialien und Energie, Kekulestr. 5, D-12489 Berlin, Germany;

    IHP, Im Technologiepark 25, D-15236 Frankfurt (Oder), Germany,Joint Lab IHP/BTU, BTU Cottbus, Konrad-Wachsmann-Allee 1, D-03046 Cottbus, Germany;

    IHP, Im Technologiepark 25, D-15236 Frankfurt (Oder), Germany,Joint Lab IHP/BTU, BTU Cottbus, Konrad-Wachsmann-Allee 1, D-03046 Cottbus, Germany;

    Helmholtz-Zentrum fuer Materialien und Energie, Kekulestr. 5, D-12489 Berlin, Germany;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 半导体技术;
  • 关键词

    solar silicon; dislocations; grain boundaries; EBIC; EBSD; diffusion length; photoluminescence;

    机译：太阳能硅脱臼;晶界EBIC； EBSD；扩散长度光致发光;

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