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首页> 外文会议>Infrared spaceborne remote sensing and instrumentation XVI >Development of material quality and structural design for high performance Type II InAs/GaSb superlattice photodiodes and focal plane arrays
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Development of material quality and structural design for high performance Type II InAs/GaSb superlattice photodiodes and focal plane arrays

机译：高性能II型InAs / GaSb超晶格光电二极管和焦平面阵列的材料质量和结构设计的发展

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摘要

Recent progress made in the structure design, growth and processing of Type-II InAs/GaSb superlattice photo-detectors lifted both the quantum efficiency and the RoA product of the detectors. Type-II superlattice demonstrated its ability to perform imaging in the Mid-Wave Infrared (MWIR) and Long-Wave Infrared (LWIR) ranges, becoming a potential competitor for technologies such as Quantum Well Infrared Photo-detectors (QWIP) and Mercury Cadmium Telluride (MCT). Using an empirical tight-binding model, we developed superlattices designs that were nearly lattice-matched to the GaSb substrates and presented cutoff wavelengths of 5 and 11 μm. We demonstrated high quality material growth with X-ray FWHM below 30 arcsec and an AFM rms roughness of 1.5 A over an area of 20×20 μm~2. The detectors with a 5 μm cutoff, capable of operating at room temperature, showed a RoA of 1.25 10~6 Ω.cm~2 at 77K, and a quantum efficiency of 32%. In the long wavelength infrared, we demonstrated high quantum efficiencies above 50% with high RoA products of 12 Ωcm2 by increasing the thickness of the active region. Using the novel M-structure superlattice design, more than one order of magnitude improvement has been observed for electrical performance of the devices. Focal plane arrays in the middle and long infrared range, hybridized to an Indigo read out integrated circuit, exhibited high quality imaging.
机译：II型InAs / GaSb超晶格光电探测器在结构设计，生长和加工方面的最新进展提高了探测器的量子效率和RoA乘积。 II型超晶格显示了其在中波红外（MWIR）和长波红外（LWIR）范围内成像的能力，成为了量子阱红外光电探测器（QWIP）和碲化汞镉等技术的潜在竞争者（MCT）。使用经验紧密结合模型，我们开发了与GaSb衬底几乎晶格匹配的超晶格设计，并提出了5和11μm的截止波长。我们证明了X射线FWHM低于30 arcsec和AFM rms粗糙度在20×20μm〜2范围内为1.5 A的高质量材料生长。具有5μm截止值的检测器能够在室温下运行，在77K时的RoA为1.25 10〜6Ω.cm〜2，量子效率为32％。在长波长红外中，通过增加有源区的厚度，我们在12Ωcm2的高RoA乘积下证明了高于50％的高量子效率。使用新颖的M结构超晶格设计，已经观察到器件的电气性能提高了一个数量级以上。中红外和远红外范围的焦平面阵列与Indigo读出集成电路混合，显示了高质量的成像。

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  • 来源
  • 会议地点 San Diego CA(US)
  • 作者

    Manijeh Razeghi; Binh-Minh Nguyen; Darin Hoffman; Pierre-Yves Delaunay; Edward Kwei-wei Huang; Meimei Tidrow; Vaidya Nathan;

  • 作者单位

    Center for Quantum Devices, Department of Electrical Engineering and Computer Science, Northwestern University, Evanston, Illinois 60208;

    Center for Quantum Devices, Department of Electrical Engineering and Computer Science, Northwestern University, Evanston, Illinois 60208;

    Center for Quantum Devices, Department of Electrical Engineering and Computer Science, Northwestern University, Evanston, Illinois 60208;

    Center for Quantum Devices, Department of Electrical Engineering and Computer Science, Northwestern University, Evanston, Illinois 60208;

    Center for Quantum Devices, Department of Electrical Engineering and Computer Science, Northwestern University, Evanston, Illinois 60208;

    Missile Defense Agency, 7100 Defense Pentagon, Washington DC 20301;

    Air Force Research Laboratory/Space Vehicles Dir;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 V443.5;
  • 关键词

    type II superlattice; InAs/GaSb; m-structure; photodetectors; MWIR; LWIR; focal plane arrays;

    机译：II型超晶格InAs / GaSb； m结构光电探测器MWIR; LWIR;焦平面阵列;

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