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首页> 外文会议>International Conference on Molecular Beam Epitaxy, 11th, Sep 11-15, 2000, Beijing, China >Homoepitaxial distributed Bragg structures grown by MBE on ZnSe substrates
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Homoepitaxial distributed Bragg structures grown by MBE on ZnSe substrates

机译：MBE在ZnSe衬底上生长的同质外延分布布拉格结构

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摘要

ZnCdSe/ZnMgSe and ZnSe/ZnMgBeSe distributed Bragg reflectors have been grown on ZnSe (1 00) substrates by molecular beam epitaxy. Optical and structural properties were investigated. A calculation was applied to the design of II-VI DBRs on ZnSe substrates. The comparison of theoretical and experimental reflectivity spectra proposes that the discrepancy of maximum reflectance is related to the heterointerface roughness in the non-pseudomorphic system. For the ZnCdSe/ZnMgSe system, DBRs contained 10.5 and 20 stacks of alternated quarter-wavelength layers were obtained. The maximum reflectance was around 80% at 560nm for 20 pairs of Zn_(0.86)Cd_90.14)Se/Zn_90.79)Mg_(0.21)Se. The ZnSe/ZnMgBeSe DBR structures show the abrupt heterointerface and good smoothness of surface. The 12 pairs of ZnSe/Zn_(0.72)Mg_(0.21)Be_(0.07)Se quarter-wavelength layers were deposited and maximum reflectance was at 605 nm. The peak position and reflectance correlate well with theoretical prediction.
机译：ZnCdSe / ZnMgSe和ZnSe / ZnMgBeSe分布的布拉格反射器已通过分子束外延生长在ZnSe（1 00）衬底上。研究了光学和结构性质。将计算应用于ZnSe衬底上的II-VI DBR的设计。理论和实验反射率光谱的比较表明，最大反射率的差异与非拟晶系统中的异质界面粗糙度有关。对于ZnCdSe / ZnMgSe系统，DBR包含10.5，获得了20个交替的四分之一波长层的堆栈。对于20对Zn_（0.86）Cd_90.14）Se / Zn_90.79）Mg_（0.21）Se在560nm处，最大反射率约为80％。 ZnSe / ZnMgBeSe DBR结构表现出突变的异质界面和良好的表面光滑度。沉积12对ZnSe / Zn_（0.72）Mg_（0.21）Be_（0.07）Se四分之一波长层，最大反射率为605 nm。峰的位置和反射率与理论预测密切相关。

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