MBE growth of mid-infrared antimonide LEDs with strained electron barriers

机译：具有应变电子势垒的中红外锑LED的MBE生长

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摘要

InAs/InAs_xSb_(1-x) single quantum well (SQW) p-i-n structures have been grown on p~+-InAs(00 1) substrates by molecular-beam epitaxy. Significant improvements in SQW light emitting diode performance have been realized by the incorporation of strained electron barrier layers. Room temperature performance has increased by a factor of up to 7. Additional 4K magneto-electro-luminescence measurements demonstrate the good materials quality.

机译：InAs / InAs_xSb_（1-x）单量子阱（SQW）p-i-n结构已通过分子束外延在p〜+ -InAs（00 1）衬底上生长。通过引入应变电子势垒层，已经实现了SQW发光二极管性能的显着改善。室温性能提高了7倍。另外的4K磁电致发光测量表明材料质量良好。

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来源
《International Conference on Molecular Beam Epitaxy, 11th, Sep 11-15, 2000, Beijing, China》|2000年|p.600-604|共5页
会议地点 Beijing(CN)
作者
X. Li; J. Heber; M. Pullin; D. Gevaux; C.C. Phillips;
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作者单位

Experimental Solid State Group, Blackett Laboratory, Imperial College of Science, Technology and Medicine, Prince Consort Road, London SW7 2BZ, UK;

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会议组织
原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
关键词
low dimensional structures; molecular beam epitaxy; antimonides; semiconducting III―V materials; heterojunction semiconductor devices; light emitting diodes;

机译：低维结构；分子束外延锑化物半导体III-V材料;异质结半导体器件；发光二极管;

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专利

1. MBE growth of mid-infrared antimonide LEDs with strained electron barriers [J] . X.Li, J.Heber, M.Pullin Journal of Crystal Growth . 2001,第期

机译：具有应变电子势垒的中红外锑LED的MBE生长
2. MBE growth of high electron mobility 2DEGs in AlGaN/GaN heterostructures controlled by RHEED [J] . D. Broxtermann, M. Sivis, J. Malindretos, AIP Advances . 2012,第1期

机译：MBE在Rab控制的AlGaN / GaN异质结构中的高电子迁移率2degs的生长
3. Design and material growth of AlGaN-channel two-dimensional-electron gas heterostructures employing strain-controlled quaternary AlGalnN barrier layers [J] . Hosomi Daiki, Chen Heng, Egawa Takashi, Japanese journal of applied physics . 2019,第1期

机译：采用应变控制的四级AlGalnN势垒层的AlGaN沟道二维电子气体异质结构的设计和材料生长
4. MBE growth of mid-infrared antimonide LEDs with strained electron barriers [C] . J. Hebe, C.C. Phillips, D. Gevaux, International conference on molecular beam epitaxy . 2001

机译：MBE中红外锑苷LED的生长具有紧张的电子屏障
5. Mid-infrared multiple quantum well lasers using digitally-grown aluminum indium arsenic antimonide barriers and strained indium arsenic antimonide wells. [D] . Vaughn, Leslie G. 2006

机译：中红外多量子阱激光器，使用数字生长的铝铟砷锑化物势垒和应变铟砷锑化物阱。
6. Photoluminescence and Band Alignment of Strained GaAsSb/GaAs QW Structures Grown by MBE on GaAs [O] . Yuri G. Sadofyev, Nigamananda Samal 2010

机译：MBE在GaAs上生长的应变GaAsSb / GaAs QW结构的光致发光和能带排列
7. MBE growth of high electron mobility 2DEGs in AlGaN/GaN heterostructures controlled by RHEED [O] . D. Broxtermann, M. Sivis, J. Malindretos, 2012

机译：RHEED控制的AlGaN / GaN异质结构中高电子迁移率2DEG的MBE生长
8. Growth and Characterization of MBE Parametric Variations Upon Polarization Independent Strained Films [R] . 2003

机译：极化独立应变薄膜mBE参数变化的生长与表征

MBE growth of mid-infrared antimonide LEDs with strained electron barriers

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