Tunneling spectroscopy in Fe-GaN-Fe trilayer structures grown by MBE using ECR microwave plasma nitrogen source

机译：使用ECR微波等离子体氮源的MBE生长的Fe-GaN-Fe三层结构中的隧道光谱

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Epitaxy of Fe on GaAs by the MBE technique has a long tradition in magnetism research. This paper deals with the growth of epitaxial Fe-GaN-Fe trilayer structures whose intriguing magnetic properties were exploited for the evaluation of GaN as a spin-dependent tunneling barrier. The trilayers were grown on semi-insulating (001) GaAs using an ultra-high vacuum deposition chamber equipped with electron cyclotron resonance (ECR) microwave plasma nitrogen source.

机译：MBE技术对GaAs上的Fe进行外延在磁性研究中具有悠久的历史。本文研究了外延Fe-GaN-Fe三层结构的生长，该结构具有吸引人的磁性，可用于评估GaN作为自旋相关的隧穿势垒。使用配备有电子回旋共振（ECR）微波等离子体氮源的超高真空沉积室，在半绝缘（001）GaAs上生长三层膜。

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来源
《International Conference on Molecular Beam Epitaxy, 11th, Sep 11-15, 2000, Beijing, China》|2000年|p.888-892|共5页
会议地点 Beijing(CN)
作者
S. Nemeth; H. Boeve; Zhiyu Liu; K. Attenborough; H. Bender; L. Nistor; G. Borghs; J. De Boeck;
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作者单位

IMEC v.z.w., MAP/CSE, Kapeldreef 75, B-3001 Leuven, Belgium;

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会议组织
原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
关键词
tunneling magnetoresistance; metal-semiconductor-metal; ECR-MBE; GaN;

机译：隧道磁阻金属-半导体-金属ECR-MBE；氮化镓;

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专利

1. Tunneling spectroscopy in Fe-GaN-Fe trilayer structures grown by MBE using ECR microwave plasma nitrogen source [J] . S.Nemeth, H.Boeve, Zhiyu Liu Journal of Crystal Growth . 2001,第期

机译：使用ECR微波等离子体氮源的MBE生长的Fe-GaN-Fe三层结构中的隧道光谱
2. In situ reflectance difference spectroscopy: nitrogen-plasma doping of MBE grown ZnTe layers [J] . D. Stifter, A. Bonanni, M. Garcia-Rocha Journal of Crystal Growth . 1999,第MAY期

机译：原位反射率差光谱：MBE生长的ZnTe层的氮等离子体掺杂
3. MAGNETIC EXCHANGE-COUPLING EFFECTS IN ASYMMETRIC TRILAYER STRUCTURES OF MBE-GROWN CO/CR/FE [J] . Theisbrohl K., Zeidler T., Schreiber F., Physical Review, B. Condensed Matter . 1996,第17期

机译：MBE生长的CO / CR / FE不对称三层结构中的磁交换耦合效应
4. Tunneling spectroscopy in Fe-GaN-Fe trilayer structures grown by MBE using ECR microwave plasma nitrogen source [C] . H., J. De Boeck, G. Borghs, International conference on molecular beam epitaxy . 2001

机译：MBE使用ECR微波等离子体氮源生长的Fe-GaN-Fe三层结构中的隧道光谱学
5. ZnO and Related Compounds and Quantum Well Structures Grown by Plasma-Assisted MBE. [D] . Zhao, Kuaile. 2014

机译：等离子体辅助MBE生长的ZnO及其相关化合物和量子阱结构。
6. Microstructure of non-polar GaN on LiGaO2 grown by plasma-assisted MBE [O] . Cheng-Hung Shih, Teng-Hsing Huang, Ralf Schuber, 2011

机译：等离子体辅助MBE在LiGaO2上生长非极性GaN的微观结构
7. Unintentional boron incorporation in AlGaN layers grown by plasma-assisted MBE using highly efficient nitrogen RF plasma-sources [O] . Novikov Sergei V., Foxon C.T. 2017

机译：使用高效氮RF等离子体源，通过等离子体辅助MBE在AlGaN层中无意掺入硼

Tunneling spectroscopy in Fe-GaN-Fe trilayer structures grown by MBE using ECR microwave plasma nitrogen source

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