Improvements in crystalline quality of thick GaN layers on GaAs (111)A by periodic insertion of low-temperature GaN buffer layers

机译：通过定期插入低温GaN缓冲层来改善GaAs（111）A上厚GaN层的晶体质量

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Thick and high quality GaN layer growth using periodic insertion of low-temperature (LT)-grown GaN buffer layers was investigated by metalorganic hydrogen chloride vapor phase epitaxy (MOHVPE). Both morphological and optical properties of GaN epitaxial layers were drastically improved by inserting a second LT-GaN buffer layer. Also, the thickness of the second buffer layer was found to affect the quality of subsequently grown epitaxial layers. The full-width at half maximum (FWHM) value of X-ray diffraction for (1010) plane (φ scan) of the GaN layer with double buffer layer structure decreased to 608 arcsec whereas that with single buffer structure was 3600 arcsec. These results indicate that the free-standing GaN substrate with low dislocation density can be possible by reiterating the growth sequence of buffer layer and epitaxial layer.

机译：通过金属有机氯化氢气相外延（MOHVPE）研究了使用低温（LT）生长的GaN缓冲层的周期性插入来厚而高质量的GaN层的生长。通过插入第二个LT-GaN缓冲层，GaN外延层的形貌和光学性能都得到了极大的改善。同样，发现第二缓冲层的厚度影响随后生长的外延层的质量。具有双缓冲层结构的GaN层的（1010）面（φ扫描）的X射线衍射的半峰全宽（FWHM）值减小至608arcsec，而具有单缓冲结构的GaN层的全宽为3600arcsec。这些结果表明，通过重复缓冲层和外延层的生长顺序，可以实现具有低位错密度的自支撑GaN衬底。

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来源
《International Conference on Nitride Semiconductors(ICNS-5); 20030525-20030530; Nara; JP》|2003年|P.2141-2144|共4页
会议地点 Nara(JP);Nara(JP)
作者
H. Murakami; N. Kawaguchi; Y. Kangawa; Y. Kumagai; A. Koukitu;
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作者单位

Department of Applied Chemistry, Faculty of Technology, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan;

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原文格式 PDF
正文语种 eng
中图分类化合物半导体;
关键词
structure and morphology; thickness; crystalline orientation and texture; III-V semiconductors; III-V semiconductors; vapor phase epitaxy; growth from vapor phase;

机译：结构和形态;厚度;晶体取向和织构; III-V族半导体; III-V族半导体;气相外延;气相生长;

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专利

1. Effect of low-temperature GaN buffer layer on the crystalline quality of subsequent GaN layers grown by MOVPE [J] . K. Hoshino, N. Yanagita, M. Araki, Journal of Crystal Growth . 2007,第Jan期

机译：低温GaN缓冲层对MOVPE生长的后续GaN层晶体质量的影响
2. Influence of substrate polarity on the low-temperature GaN buffer layer growth on GaAs (111)A and (111)B surfaces [J] . Hisashi Murakami, Yoshinao Kumagai, Hisashi Seki, Journal of Crystal Growth . 2003,第3a4期

机译：衬底极性对GaAs（111）A和（111）B表面上低温GaN缓冲层生长的影响
3. GaN Growth with Low-Temperature GaN Buffer Layers Directly on Si(111) by Hydride Vapour Phase Epitaxy [J] . Yu Hui-Qiang, Chen Lin, Zhang Rong, Chinese physics letters . 2004,第9期

机译：通过氢化物气相外延直接在Si（111）上具有低温GaN缓冲层的GaN生长
4. Improvements in crystalline quality of thick GaN layers on GaAs (111)A by periodic insertion of low-temperature GaN buffer layers [C] . H. Murakami, N. Kawaguchi, Y. Kangawa, International conference on nitride semiconductors . 2003

机译：通过周期性插入低温GaN缓冲层的GaAs（111）A上厚GaN层晶体质量的改进
5. Heteroepitaxial Thick GaN Layers and Vertical High-Power Devices by Selective Area MOCVD Growth [D] . Tanaka, Atsunori. 2019

机译：通过选择性地区MOCVD生长的异膜厚GaN层和垂直大功率器件
6. Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs [O] . Huan-Yu Shih, Makoto Shiojiri, Ching-Hsiang Chen, -1

机译：接近无应变的GaN兼容缓冲层上GaN外延层中的超低穿线位错密度及其在异质外延LED中的应用
7. Improvement of GaN layer quality by using the bulk-GaN buffer structure grown by metalorganic chemical vapor deposition [O] . Yang CC 2012

机译：通过使用通过有机金属化学气相沉积法生长的块状GaN缓冲结构来提高GaN层质量

Improvements in crystalline quality of thick GaN layers on GaAs (111)A by periodic insertion of low-temperature GaN buffer layers

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