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首页> 外文会议>International Conference on Silicon Carbide and Related Materials 2001 Pt.1 Oct 28-Nov 2, 2001 Tsukuba, Japan >Raman Microprobe Study of Carrier Density Profiles in Modulation-Doped 6H SiC
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Raman Microprobe Study of Carrier Density Profiles in Modulation-Doped 6H SiC

机译：调制掺杂6H SiC中载流子密度分布的拉曼显微探针研究

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摘要

Raman image measurements have been made to determine the free carrier distribution in modulation-doped 6H-SiC crystals, which have a stripe like-distribution of nitrogen donor concentration. The distribution of the donor impurity is controlled by alternate on-off of the doping N_2-gas supply during the crystal growth. The carrier concentration, in other words the impurity concentration is determined from the line shape analysis of the LO phonon plasmon coupled mode. The thickness of the transition region between the doped and undoped regions after the shut-off of the doping gas is determined from Raman profiles. The residual time of the N_2 gas on the growth surface inferred from the thickness and the growth rate is longer than the residence time of the N_2 gas in the furnace. This result indicates that N_2 atoms attach to the wall and source side in the furnace during the gas supply. The relation between the carrier mobility and carrier concentration is also determined from the analysis of the LO phonon plasmon coupled modes at different positions.
机译：已经进行了拉曼图像测量以确定调制掺杂的6H-SiC晶体中的自由载流子分布，该晶体具有氮供体浓度的条纹状分布。供体杂质的分布是通过在晶体生长过程中交替掺杂N_2气源来控制的。载流子浓度，换言之，杂质浓度由LO声子等离子体激元耦合模式的线形分析确定。从拉曼分布中确定在关闭掺杂气体之后在掺杂和未掺杂区域之间的过渡区域的厚度。从厚度和生长速率推断出的N_2气体在生长表面上的残留时间长于N_2气体在炉中的停留时间。该结果表明，在供气期间，N_2原子附着在炉的壁和源侧。载流子迁移率和载流子浓度之间的关系也由对LO声子等离子体激元耦合模式在不同位置的分析确定。

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