Characteristics of Ultra Thin (EOT<10A) RTCVD Zr Silicate (Zr_(27)Si_(10)O_(63)) Gate Dielectrics

机译：超薄（EOT <10A）RTCVD硅酸锆（Zr_（27）Si_（10）O_（63））栅介质的特性

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Replacing the silicon dioxide with alternative high-dielectric constant thin films as the gate dielectrics for sub-100nm CMOS devices have been receiving increased attention in recent years. ZrO_2, HfO_2 (k～25), zirconium silicate (Zr_xSi_yO_(l-x-y)) and hafnium silicate (Hf_xSi_yO_(l-x-y)) are the most attractive high-K materials due to their thermodynamic stability in direct contact with Si and high permittivity. In this paper, we report MOS characteristics of RT-CVD (Rapid Thermal Chemical Vapor Deposition) ultra thin (Zr_(27)Si_(10)O_(63)) directly deposited on Si The deposited films show an equivalent silicon oxide thickness (EOT) of 9.6A with extremely low leakage current of 23mA/cm~2 at Vg=-lV. We have also studied the effects of gate electrode materials on their electrical properties. And it was found that TiNpoly-SiGe gate has better interface and less hysteresis (～lmV) than that of TiNAl gate (～30mV).

机译：近年来，用替代的高介电常数薄膜代替二氧化硅作为100nm以下CMOS器件的栅极电介质受到了越来越多的关注。 ZrO_2，HfO_2（k〜25），硅酸锆（Zr_xSi_yO_（1-x-y））和硅酸ha（Hf_xSi_yO_（1-x-y））是最有吸引力的高K材料，因为它们与硅直接接触的热力学稳定性和高介电常数。在本文中，我们报告了直接沉积在Si上的超薄（Zr_（27）Si_（10）O_（63））超薄RT-CVD（快速热化学气相沉积）的MOS特性。沉积膜显示出等效的氧化硅厚度（EOT））的9.6A），在Vg = -1V时泄漏电流极低，仅为23mA / cm〜2。我们还研究了栅电极材料对其电性能的影响。并且发现，TiNpoly-SiGe栅比TiNAl栅（〜30mV）具有更好的界面和更低的磁滞（〜lmV）。

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《International Symposium on Rapid Thermal and Other Short-Time Processing Technologies II, Mar 24-29, 2001, Washington DC》|2001年|p.205-210|共6页
会议地点 Washington DC(US);Washington DC(US)
作者
C. H. Lee; H. F. Luan; W. P. Bai; S. J. Lee; T.S. Jeon; Y. Senzaki; D. Roberts; D. L. Kwong;
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Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas, Austin, TX 78712, USA;

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正文语种 eng
中图分类无线电电子学、电信技术;
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1. Characteristics of Ultra Thin Hf-Silicate Gate Dielectrics on Si_(0.9954)C_(0.0046)/Si Heterolayers [J] . Kou-Chen LIU, Sidhu MAIKAP, Pang-Shiu CHEN Japanese Journal of Applied Physics. Part 1, Regular Papers & Short Notes . 2005,第4B期

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2. Dielectric nonlinear characteristics of Ba(Zr_(0.35)Ti_(0.65))O_(3) thin films grown by a sol-gel process [J] . Jiwei Zhai, Xi Yao, Liangying Zhang, Applied Physics Letters . 2004,第16期

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3. Characteristics of Ba(Mg_(1/3)Ta_(2/3))O_(3) thin films prepared by pulsed laser deposition process and their effect on the growth of Pb(Zr_(1-x)Ti_(x))O_(3) thin films [J] . I-Nan Lin, Chen-Wei Liang, Ying-Hao Chu, Journal of Applied Physics . 2004,第10期

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4. Characteristics of Ultra Thin (EOT<10A) RTCVD Zr Silicate (Zr_(27)Si_(10)O_(63)) Gate Dielectrics [C] . C. H. Lee, H. F. Luan, W. P. Bai, International symposium on Repid Thermal and Other Short-Time Processing Technologies . 2001

机译：超薄（EOT <10A）RTCVD ZR硅酸盐的特性（Zr_（27）Si_（10）O_（63））栅极电介质
5. Compact gate capacitance and gate current modeling of ultra-thin (EOT ~ 1 nm and below) silicon dioxide and high-kappa gate dielectrics. [D] . Li, Fei. 2006

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6. Sol–Gel PMMA–ZrO2 HybridLayers as Gate Dielectric for Low-Temperature ZnO-Based Thin-Film Transistors [O] . ClementeG. Alvarado-Beltrán, Jorge L. Almaral-Sánchez, Israel Mejia, 2017

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Characteristics of Ultra Thin (EOT<10A) RTCVD Zr Silicate (Zr_(27)Si_(10)O_(63)) Gate Dielectrics

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