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XPS INVESTIGATION OF OXIDATION OF CU SEED LAYERS FOR MICROELECTRONICS

机译:用于微电子的铜种子层氧化的XPS研究

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摘要

X-ray photoelectron spectroscopy has been used to examine the oxidation of a 100nm Cu seed layer that had been sputter deposited on top of 50 nm TaN diffusion barrier on a SiO_2 coated 200mm Si wafer. The growth of the oxide layer has been measured for storage time up to 861 hours. A substantial but complex oxide layer is observed at the shortest times [20 minutes] and the thickness of this oxides doubles between 28 minutes at approximately 500 hours. After 500 hours the growth rate is substantially decreased.
机译:X射线光电子能谱法已用于检查已溅射沉积在SiO_2涂层的200mm Si晶片上50 nm TaN扩散阻挡层顶部的100nm Cu籽晶层的氧化。已经测量了氧化物层的生长,存储时间长达861小时。在最短的时间[20分钟]上观察到了坚固的复合氧化物层,该氧化物的厚度在大约500小时的28分钟之间翻了一番。 500小时后,生长速率大大降低。

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